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Takashi Kobayashi

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cond-mat.mes-hall quant-ph physics.app-ph

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preprint2026arXiv

Inferring charge-noise source locations from correlations in spin qubits

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

preprint2022arXiv

Quantum error correction with silicon spin qubits

Large-scale quantum computers rely on quantum error correction to protect the fragile quantum information. Among the possible candidates of quantum computing devices, silicon-based spin qubits hold a great promise due to their compatibility to mature nanofabrication technologies for scaling up. Recent advances in silicon-based qubits have enabled the implementations of high quality one and two qubit systems. However, the demonstration of quantum error correction, which requires three or more coupled qubits and often involves a three-qubit gate, remains an open challenge. Here, we demonstrate a three-qubit phase correcting code in silicon, where an encoded three-qubit state is protected against any phase-flip error on one of the three qubits. The correction to this encoded state is performed by a three-qubit conditional rotation, which we implement by an efficient single-step resonantly driven iToffoli gate. As expected, the error correction mitigates the errors due to one qubit phase-flip as well as the intrinsic dephasing due to quasi-static phase noise. These results show a successful implementation of quantum error correction and the potential of silicon-based platform for large-scale quantum computing.

preprint2021arXiv

Fast universal quantum control above the fault-tolerance threshold in silicon

Fault-tolerant quantum computers which can solve hard problems rely on quantum error correction. One of the most promising error correction codes is the surface code, which requires universal gate fidelities exceeding the error correction threshold of 99 per cent. Among many qubit platforms, only superconducting circuits, trapped ions, and nitrogen-vacancy centers in diamond have delivered those requirements. Electron spin qubits in silicon are particularly promising for a large-scale quantum computer due to their nanofabrication capability, but the two-qubit gate fidelity has been limited to 98 per cent due to the slow operation.Here we demonstrate a two-qubit gate fidelity of 99.5 per cent, along with single-qubit gate fidelities of 99.8 per cent, in silicon spin qubits by fast electrical control using a micromagnet-induced gradient field and a tunable two-qubit coupling. We identify the condition of qubit rotation speed and coupling strength where we robustly achieve high-fidelity gates. We realize Deutsch-Jozsa and Grover search algorithms with high success rates using our universal gate set. Our results demonstrate the universal gate fidelity beyond the fault-tolerance threshold and pave the way for scalable silicon quantum computers.

preprint2020arXiv

Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor

The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) OFETs with electrode overlap and peripheral regions was measured with a frequency response analyzer. The complex modulus was derived from an equivalent circuit of OFETs with overlap and peripheral regions using a four-terminal matrix approach. The modulus spectra of the P3HT OFETs were successfully fitted by those calculated using the expression derived from the equivalent circuit. Three structures were found in the modulus spectra of the P3HT OFETs owing to the dielectric properties of the gate insulator, transport properties of the organic semiconductor, and contact resistance from the low to high frequency ranges. The resistivity of the gate insulators and the field-effect mobility of working OFETs were determined using the values of the circuit components of the equivalent circuit obtained by fitting.

preprint2015arXiv

Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.

preprint2013arXiv

Cooperative Lifting of Spin Blockade in a Three-Terminal Triple Quantum Dot

We report measurements of multi-path transport through a triple quantum dot (TQD) in the few-electron regime using a GaAs three-terminal device with a separate lead attached to each dot. When two paths reside inside the transport window and are simultaneously spin-blockaded, the leak currents through both paths are significantly enhanced. We suggest that the transport processes in the two paths cooperate to lift the spin blockade. Fine structures in transport spectra indicate that different kinds of cooperative mechanisms are involved, depending on the details of the three-electron spin states governed by the size of exchange splitting relative to nuclear spin fluctuations. Our results indicate that a variety of correlation phenomena can be explored in three-terminal TQDs.

preprint2012arXiv

Observation of Hysteretic Transport Due to Dynamic Nuclear Spin Polarization in a GaAs Lateral Double Quantum Dot

We report a new transport feature in a GaAs lateral double quantum dot that emerges only for magnetic field sweeps and shows hysteresis due to dynamic nuclear spin polarization (DNP). This DNP signal appears in the Coulomb blockade regime by virtue of the finite inter-dot tunnel coupling and originates from the crossing between ground levels of the spin triplet and singlet extensively used for nuclear spin manipulations in pulsed gate experiments. The unexpectedly large signal intensity is suggestive of unbalanced DNP between the two dots, which opens up the possibility of controlling electron and nuclear spin states via DC transport.