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Researcher profile

Tahir Hussain

Tahir Hussain contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scigr-qchep-ex

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Published work

3 published item(s)

preprint2021arXiv

On event-by-event pseudorapidity fluctuations in relativistic nuclear interactions

Present study is an attempt to have a detailed look into event-by-event(e-by-e) pseudorapidity fluctuations of the relativistic charged particles produced in $^{28}$Si-nucleus interactions at incident momenta 4.5A and 14.5A GeV/c.The method used in the present study makes use of a kinematic variable which is derived in terms of the average pseudo-rapidity and the total number of particles produced in a single event. The multiplicity and pseudorapidity dependence of these fluctuations have also been studied. The results obtained for the experimental data are compared with HIJING simulation.

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preprint2015arXiv

Conformal Killing Vectors Of Plane Symmetric Four Dimensional Lorentzian Manifolds

In this paper, we investigate conformal Killing's vectors (CKVs) admitted by some plane symmetric spacetimes. Ten conformal Killing's equations and their general forms of CKVs are derived along with their conformal factor. The existence of conformal Killing's symmetry imposes restrictions on the metric functions. The conditions imposing restrictions on these metric functions are obtained as a set of integrability conditions. Considering the cases of time-like and inheriting CKVs, we obtain spacetimes admitting plane conformal symmetry. Integrability conditions are solved completely for some known non-conformally flat and conformally flat classes of plane symmetric spacetimes. A special vacuum plane symmetric spacetime is obtained, and it is shown that for such a metric CKVs are just the homothetic vectors (HVs). Among all the examples considered, there exists only one case with a six dimensional algebra of special CKVs admitting one proper CKV. In all other examples of non-conformally flat metrics, no proper CKV is found and CKVs are either HVs or Killing's vectors (KVs). In each of the three cases of conformally flat metrics, a fifteen dimensional algebra of CKVs is obtained of which eight are proper CKVs.

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preprint2015arXiv

Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures

Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.

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