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Taeg Yeoung Ko

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Published work

3 published item(s)

preprint2020arXiv

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.

preprint2013arXiv

Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity (vF) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on SiO2 substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

preprint2011arXiv

Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation

In this note, we report a Raman spectroscopy study of annealing-induced effects on graphene samples prepared by the microexfoliation method. It was shown that randomly located adhesive residues often contaminate nearby graphene sheets during thermal annealing. The contamination on graphene can be as thin as ~1 nm, but gives several new Raman bands of unusually strong intensity. We also find that their intensity is strongly dependent on the excitation wavelength implying that graphene-induced Raman enhancement may be operative. The current study also suggests that graphene can be selectively sensitive towards certain molecular species in binding, which can be exploited for interesting application.