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Sunmin Ryu

Sunmin Ryu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phcond-mat.soft

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Published work

19 published item(s)

preprint2021arXiv

Second-Harmonic Young Interference in Atom-Thin Heterocrystals

Optical second-harmonic generation (SHG) is a nonlinear parametric process that doubles the frequency of incoming light. Only allowed in non-centrosymmetric materials, it has been widely used in frequency modulation of lasers, surface scientific investigation, and label-free imaging in biological and medical sciences. Two-dimensional crystals are ideal SHG-materials not only for their strong light-matter interaction and atomic thickness defying the phase-matching requirement but also for their stackability into customized hetero-crystals with high angular precision and material diversity. Here we directly show that SHG in hetero-bilayers of transition metal dichalcogenides (TMDs) is governed by optical interference between two coherent SH fields with material-dependent phase delays using spectral phase interferometry. We also quantify the frequency-dependent phase difference between MoS2 and WS2, which also agrees with polarization-resolved data and first-principles calculations on complex susceptibility. The second-harmonic analogue of Young double-slit interference shown in this work demonstrates the potential of custom-designed parametric generation by atom-thick nonlinear optical materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Crossover between Photochemical and Photothermal Oxidations of Atomically Thin Magnetic Semiconductor CrPS4

Many two-dimensional (2D) semiconductors represented by transition metal dichalcogenides have tunable optical bandgaps in the visible or near IR-range standing as a promising candidate for optoelectronic devices. Despite this potential, however, their photoreactions are not well understood or controversial in the mechanistic details. In this work, we report a unique thickness-dependent photoreaction sensitivity and a switchover between two competing reaction mechanisms in atomically thin chromium thiophosphate (CrPS4), a two-dimensional antiferromagnetic semiconductor. CrPS4 showed a threshold power density 2 orders of magnitude smaller than that for MoS2 obeying a photothermal reaction route. In addition, reaction cross section quantified with Raman spectroscopy revealed distinctive power dependences in the low and high power regimes. On the basis of optical in situ thermometric measurements and control experiments against O2, water, and photon energy, we proposed a photochemical oxidation mechanism involving singlet O2 in the low power regime with a photothermal route for the other. We also demonstrated a highly effective encapsulation with Al2O3 as a protection against the destructive photoinduced and ambient oxidations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direction-Controlled Chemical Doping for Reversible G-Phonon Mixing in ABC Trilayer Graphene

Not only the apparent atomic arrangement but the charge distribution also defines the crystalline symmetry that dictates the electronic and vibrational structures. In this work, we report reversible and direction-controlled chemical doping that modifies the inversion symmetry of AB-bilayer and ABCtrilayer graphene. For the top-down and bottom-up hole injection into graphene sheets, we employed molecular adsorption of electronegative I2 and annealing-induced interfacial hole doping, respectively. The chemical breakdown of the inversion symmetry led to the mixing of the G phonons, Raman active Eg and Raman-inactive Eu modes, which was manifested as the two split G peaks, G- and G+. The broken inversion symmetry could be recovered by removing the hole dopants by simple rinsing or interfacial molecular replacement. Alternatively, the symmetry could be regained by double-side charge injection, which eliminated G- and formed an additional peak, Go, originating from the barely doped interior layer. Chemical modification of crystalline symmetry as demonstrated in the current study can be applied to other low dimensional crystals in tuning their various material properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Redox-Governed Charge Doping Dictated by Interfacial Diffusion in Two-Dimensional Materials

Controlling extra charge carriers is pivotal in manipulating electronic, optical, and magnetic properties of various two-dimensional (2D) materials. Nonetheless, the ubiquitous hole doping of 2D materials in the air and acids has been controversial in its mechanistic details. Here we show their common origin is an electrochemical reaction driven by redox couples of oxygen and water molecules. Using real-time photoluminescence imaging of WS2 and Raman spectroscopy of graphene, we capture molecular diffusion through the 2D nanoscopic space between 2D materials and hydrophilic substrates, and show that the latter accommodate water molecules also serving as a hydrating solvent. We also demonstrate that HCl-induced doping is governed by dissolved O2 and pH in accordance with the Nernst equation. The nanoscopic electrochemistry anatomized in this work sets an ambient limit to material properties, which is universal to not only 2D but also other forms of materials.

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preprint2020arXiv

Reversible Sulfuric Acid Doping of Graphene Probed by in-situ Multi-Wavelength Raman Spectroscopy

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its validity towards precise quantification of chemical charge doping has not been tested. In this work, we quantified in-situ the fractional frequency change of 2D and G peaks in response of charge density induced by sulfuric acid solution as well as native lattice strain. Based on the experimental data and theoretical corroboration, we presented an optical method that simultaneously determines strain and chemically-induced charge density for three popular excitation wavelengths of 457, 514 and 633 nm. In order to expedite intercalation of dopant species through the graphene-SiO2 substrates, dense arrays of nanopores were precisely generated in graphene by thermal oxidation. The nano-perforated graphene membrane system was robust for multiple cycles of doping and undoping processes, and will be useful in studying various types of chemical interactions with graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Varying Electronic Coupling at Graphene-Copper Interfaces Probed with Raman Spectroscopy

As the synthesis of graphene on copper became one of the primary preparation methods for both fundamental research and industrial application, Raman spectra of graphene/Cu systems need to be quantitatively understood regarding how their interactions affect the electronic structure of graphene. Using multi-wavelength Raman spectroscopy, we investigated three types of graphene bound on Cu: graphene grown on Cu foils and Cu film/SiO2, and Cu-evaporated exfoliated graphene. 2D peak frequencies of the first two samples were ~17 cm-1 higher than expected for 1.96 eV excitation even when the effect of strain was considered. More notably, the upshift in 2D decreased with increasing excitation energy. Based on control experiments using Cu-evaporated graphene, we revealed that the spectral anomaly was induced by environment-dependent nonlinear dispersion in the electronic bands of graphene and determined the degree of the electronic modification. We also showed that the large upshifts of G and 2D peaks originating from differential thermal expansion of Cu could be significantly reduced by backing Cu films with dielectric substrates of insignificant thermal expansion. The quantitative analysis of electronic coupling between graphene and Cu presented in this study will be highly useful in characterizing as-grown graphene and possibly in other forms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOx Schottky electrode, where the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by on-state gate field. Our MESFETs with single-, double-, and triple-layered MoS2 respectively demonstrate high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold voltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETs was theoretically explained with electron scattering reduction mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-Dimensional Water Diffusion at a Graphene-Silica Interface

Because of the dominant role of the surface of molecules and their individuality, molecules behave dis-tinctively in a confined space, which has far-reaching implications in many physical, chemical and bio-logical systems. Here, we demonstrate that graphene forms a unique atom-thick interstitial space that enables the study of molecular diffusion in 2-dimensions with underlying silica substrates. Raman spec-troscopy visualized intercalation of water from the edge to the center underneath graphene in real time, which was dictated by the hydrophilicity of the substrates. In addition, graphene undergoes reversible deformation to conform to intercalating water clusters or islands. Atomic force microscopy confirmed that the interfacial water layer is only ca. 3.5 angstroms thick, corresponding to one bilayer unit of normal ice. This study also demonstrates that oxygen species responsible for the ubiquitous hole dop-ing are located below graphene. In addition to serving as a transparent confining wall, graphene and possibly other 2-dimensional materials can be used as an optical indicator sensitive to interfacial mass transport and charge transfer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity (vF) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on SiO2 substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Origin of New Broad Raman D and G Peaks in Annealed Graphene

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks ob-served in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman peaks overlapping the D, G and 2D peaks of graphene itself. Based on the topographic confirmation by AFM, the new Raman peaks were attributed to amorphous carbon formed on the surface of graphene by carbonization of environmental hydrocarbons. While the carbonaceous layers were formed for a wide range of annealing temperature and time, they could be effectively removed by prolonged annealing in vacuum. This study underlines that spectral features of graphene and presumably other 2-dimensional ma-terials are highly vulnerable to interference by foreign materials of molecular thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optical Separation of Mechanical Strain from Charge Doping in Graphene

Graphene, due to its superior stretchability, exhibits rich structural deformation behaviors and its strain-engineering has proven useful in modifying its electronic and magnetic properties. Despite the strain-sensitivity of the Raman G and 2D modes, the optical characterization of the native strain in graphene on silica substrates has been hampered by excess charges interfering with both modes. Here we show that the effects of strain and charges can be optically separated from each other by correlation analysis of the two modes, enabling simple quantification of both. Graphene with in-plane strain randomly occurring between -0.2% and 0.4% undergoes modest compression (-0.3%) and significant hole doping upon thermal treatments. This study suggests that substrate-mediated mechanical strain is a ubiquitous phenomenon in two-dimensional materials. The proposed analysis will be of great use in characterizing graphene-based materials and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Raman Spectroscopy of Lithographically Patterned Graphene Nanoribbons

Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known to have nonzero electronic bandgap. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and prominent disorder-related D band originating from scattering at ribbon edges. The D-to-G band intensity ratio generally increases with decreasing ribbon width. However, its decrease for width < 25 nm, partly attributed to amorphization at the edges, provides a valuable experimental estimate on D mode relaxation length of <5 nm. The upshift in the G band of the narrowest GNRs can be attributed to confinement effect or chemical doping by functional groups on the GNR edges. Notably, GNRs are much more susceptible to photothermal effects resulting in reversible hole doping caused by atmospheric oxygen than bulk graphene sheets. Finally we show that the 2D band is still a reliable marker in determining the number of layers of GNRs despite its significant broadening for very narrow GNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation

In this note, we report a Raman spectroscopy study of annealing-induced effects on graphene samples prepared by the microexfoliation method. It was shown that randomly located adhesive residues often contaminate nearby graphene sheets during thermal annealing. The contamination on graphene can be as thin as ~1 nm, but gives several new Raman bands of unusually strong intensity. We also find that their intensity is strongly dependent on the excitation wavelength implying that graphene-induced Raman enhancement may be operative. The current study also suggests that graphene can be selectively sensitive towards certain molecular species in binding, which can be exploited for interesting application.

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preprint2010arXiv

Anomalous Lattice Vibrations of Single and Few-Layer MoS2

Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime.

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preprint2010arXiv

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene. Gas flow experiments show that dry oxygen reversibly dopes graphene; doping becomes stronger and more irreversible in the presence of moisture and over long periods of time. We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface.

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preprint2009arXiv

Tuning the graphene work function by electric field effect

We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.

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preprint2008arXiv

Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of ~0.5 eV. These oxygen species partially desorb in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O2 atmosphere at room temperature. This strongly doped graphene is very different than graphene oxide made by mineral acid attack.

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preprint2008arXiv

Reversible Basal Plane Hydrogenation of Graphene

We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100~200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.

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