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Researcher profile

Sunmin Ryu

Sunmin Ryu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-ph

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Published work

7 published item(s)

preprint2021arXiv

Second-Harmonic Young Interference in Atom-Thin Heterocrystals

Optical second-harmonic generation (SHG) is a nonlinear parametric process that doubles the frequency of incoming light. Only allowed in non-centrosymmetric materials, it has been widely used in frequency modulation of lasers, surface scientific investigation, and label-free imaging in biological and medical sciences. Two-dimensional crystals are ideal SHG-materials not only for their strong light-matter interaction and atomic thickness defying the phase-matching requirement but also for their stackability into customized hetero-crystals with high angular precision and material diversity. Here we directly show that SHG in hetero-bilayers of transition metal dichalcogenides (TMDs) is governed by optical interference between two coherent SH fields with material-dependent phase delays using spectral phase interferometry. We also quantify the frequency-dependent phase difference between MoS2 and WS2, which also agrees with polarization-resolved data and first-principles calculations on complex susceptibility. The second-harmonic analogue of Young double-slit interference shown in this work demonstrates the potential of custom-designed parametric generation by atom-thick nonlinear optical materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Crossover between Photochemical and Photothermal Oxidations of Atomically Thin Magnetic Semiconductor CrPS4

Many two-dimensional (2D) semiconductors represented by transition metal dichalcogenides have tunable optical bandgaps in the visible or near IR-range standing as a promising candidate for optoelectronic devices. Despite this potential, however, their photoreactions are not well understood or controversial in the mechanistic details. In this work, we report a unique thickness-dependent photoreaction sensitivity and a switchover between two competing reaction mechanisms in atomically thin chromium thiophosphate (CrPS4), a two-dimensional antiferromagnetic semiconductor. CrPS4 showed a threshold power density 2 orders of magnitude smaller than that for MoS2 obeying a photothermal reaction route. In addition, reaction cross section quantified with Raman spectroscopy revealed distinctive power dependences in the low and high power regimes. On the basis of optical in situ thermometric measurements and control experiments against O2, water, and photon energy, we proposed a photochemical oxidation mechanism involving singlet O2 in the low power regime with a photothermal route for the other. We also demonstrated a highly effective encapsulation with Al2O3 as a protection against the destructive photoinduced and ambient oxidations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direction-Controlled Chemical Doping for Reversible G-Phonon Mixing in ABC Trilayer Graphene

Not only the apparent atomic arrangement but the charge distribution also defines the crystalline symmetry that dictates the electronic and vibrational structures. In this work, we report reversible and direction-controlled chemical doping that modifies the inversion symmetry of AB-bilayer and ABCtrilayer graphene. For the top-down and bottom-up hole injection into graphene sheets, we employed molecular adsorption of electronegative I2 and annealing-induced interfacial hole doping, respectively. The chemical breakdown of the inversion symmetry led to the mixing of the G phonons, Raman active Eg and Raman-inactive Eu modes, which was manifested as the two split G peaks, G- and G+. The broken inversion symmetry could be recovered by removing the hole dopants by simple rinsing or interfacial molecular replacement. Alternatively, the symmetry could be regained by double-side charge injection, which eliminated G- and formed an additional peak, Go, originating from the barely doped interior layer. Chemical modification of crystalline symmetry as demonstrated in the current study can be applied to other low dimensional crystals in tuning their various material properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Redox-Governed Charge Doping Dictated by Interfacial Diffusion in Two-Dimensional Materials

Controlling extra charge carriers is pivotal in manipulating electronic, optical, and magnetic properties of various two-dimensional (2D) materials. Nonetheless, the ubiquitous hole doping of 2D materials in the air and acids has been controversial in its mechanistic details. Here we show their common origin is an electrochemical reaction driven by redox couples of oxygen and water molecules. Using real-time photoluminescence imaging of WS2 and Raman spectroscopy of graphene, we capture molecular diffusion through the 2D nanoscopic space between 2D materials and hydrophilic substrates, and show that the latter accommodate water molecules also serving as a hydrating solvent. We also demonstrate that HCl-induced doping is governed by dissolved O2 and pH in accordance with the Nernst equation. The nanoscopic electrochemistry anatomized in this work sets an ambient limit to material properties, which is universal to not only 2D but also other forms of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reversible Sulfuric Acid Doping of Graphene Probed by in-situ Multi-Wavelength Raman Spectroscopy

Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its validity towards precise quantification of chemical charge doping has not been tested. In this work, we quantified in-situ the fractional frequency change of 2D and G peaks in response of charge density induced by sulfuric acid solution as well as native lattice strain. Based on the experimental data and theoretical corroboration, we presented an optical method that simultaneously determines strain and chemically-induced charge density for three popular excitation wavelengths of 457, 514 and 633 nm. In order to expedite intercalation of dopant species through the graphene-SiO2 substrates, dense arrays of nanopores were precisely generated in graphene by thermal oxidation. The nano-perforated graphene membrane system was robust for multiple cycles of doping and undoping processes, and will be useful in studying various types of chemical interactions with graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4

Atomically thin binary 2-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure and thickness. By adding another element in those materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffractions. Transmission electron microscopy showed that preferentially-cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy for the first time and exhibited significant dependence on thickness of crystals exfoliated down to single layer. Optical absorption determined by reflectance contrast was dominated by d-d type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness-dependence and hinted a high photochemical activity for single layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this novel magnetic semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Varying Electronic Coupling at Graphene-Copper Interfaces Probed with Raman Spectroscopy

As the synthesis of graphene on copper became one of the primary preparation methods for both fundamental research and industrial application, Raman spectra of graphene/Cu systems need to be quantitatively understood regarding how their interactions affect the electronic structure of graphene. Using multi-wavelength Raman spectroscopy, we investigated three types of graphene bound on Cu: graphene grown on Cu foils and Cu film/SiO2, and Cu-evaporated exfoliated graphene. 2D peak frequencies of the first two samples were ~17 cm-1 higher than expected for 1.96 eV excitation even when the effect of strain was considered. More notably, the upshift in 2D decreased with increasing excitation energy. Based on control experiments using Cu-evaporated graphene, we revealed that the spectral anomaly was induced by environment-dependent nonlinear dispersion in the electronic bands of graphene and determined the degree of the electronic modification. We also showed that the large upshifts of G and 2D peaks originating from differential thermal expansion of Cu could be significantly reduced by backing Cu films with dielectric substrates of insignificant thermal expansion. The quantitative analysis of electronic coupling between graphene and Cu presented in this study will be highly useful in characterizing as-grown graphene and possibly in other forms.

0 citations0 reviewsNo code linkedOpen access