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Tae Ho Lee

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Published work

2 published item(s)

preprint2020arXiv

Estimation of Infection Rate and Prediction of Initial Infected Individuals of COVID-19

We consider the pandemic spreading of COVID-19 for some selected countries after the outbreak of the coronavirus in Wuhan City, China. We estimated the infection rate and the initial infected individuals of COVID-19 by using the officially reported data at the early stage of the epidemic for the susceptible (S), infectable (I), quarantined (Q), and the cofirmed recovered (Rk) population model, so called SIQRk model. In the reported data we know the quarantined cases and the recovered cases. We can not know the recovered cases from the asymptomatic cases. In the SIQRk model we can estimated the model parameters and the initial infecting cases (confirmed ans asymtomatic cases) from the data fits. We obtained the infection rate in the range between 0.233 and 0.462, the basic reproduction number Ro in the range between 1.8 and 3.5, and the initial number of infected individuals in the range betwee 10 and 8409 for some selected countries. By using fitting parameters we estimated the maximum time of the infection for Germany when the government are performing the quarantine policy. The disease is undergoing to the calm state about six months after first patients were identified.

preprint2015arXiv

Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal

We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.