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Tadashi Ogitsu

Tadashi Ogitsu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.str-el physics.comp-ph

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preprint2022arXiv

Ballistic photocurrent driven by optical phonon modes in a polaronic ferroelectric

We investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly-polarized light due to generation of the phonon-assisted ballistic-current in addition to the injection-current generated by electron-hole pairs. The optically excited phonon modes generate an asymmetric carrier distribution that causes a strong directional ballistic-current. The ballistic-current enhances the photocurrent several times at above band-gap excitation frequencies and is sublinearly dependent on the excitation intensity. This strong phonon-assisted zero-frequency directional ballistic-current demonstrates an alternative way to boost the bulk photovoltaic effect (BPVE) in electronic ferroelectric materials with strong local electron-phonon coupling.

preprint2021arXiv

A non-perturbative study of bulk photovoltaic effect enhanced by an optically induced phase transition

Solid systems with strong correlations and interactions under light illumination have the potential for exhibiting interesting bulk photovoltaic behavior in the non-perturbative regime, which has remained largely unexplored in the past theoretical studies. We investigate the bulk photovoltaic response of a perovskite manganite with strongly coupled electron-spin-lattice dynamics, using real-time simulations performed with a tight-binding model. The transient changes in the band structure and the photoinduced phase transitions, emerging from spin and phonon dynamics, result in a nonlinear current versus intensity behavior beyond the perturbative limit. The current rises sharply across a photoinduced magnetic phase transition, which later saturates at higher light intensities due to excited phonon and spin modes. The predicted peak photoresponsivity is orders of magnitude higher than other known ferroelectric oxides such as BiFeO$_3$. We disentangle phonon-and spin-assisted components to the ballistic photocurrent, showing that they are comparable in magnitude. Our results illustrate a promising alternative way for controlling and optimizing the bulk photovoltaic response through the photoinduced phase transitions in strongly-correlated systems.

preprint2020arXiv

Phase transformation in boron under shock compression

Using first-principles molecular dynamics, we calculated the equation of state and shock Hugoniot of various boron phases. We find a large mismatch between Hugoniots based on existing knowledge of the equilibrium phase diagram and those measured by shock experiments, which could be reconciled if the $α$-B$_{12}$/$β\rightarrowγ$-B$_{28}$ transition is significantly over-pressurized in boron under shock compression. Our results also indicate that there exists an anomaly and negative Clapeyron slope along the melting curve of boron at 100 GPa and 1500--3000 Kelvin. These results enable in-depth understanding of matter under shock compression, in particular the significance of compression-rate dependence of phase transitions and kinetic effects in experimental measurements.

preprint2014arXiv

First-principles simulation of capacitive charging of graphene and implications for supercapacitor design

Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a low electronic density of states (i.e., quantum capacitance), which limits their ability to redistribute charge and efficiently screen this field. To explore these effects, we introduce a first-principles approach based on the effective screening medium framework, which is used to directly simulate the charge storage behavior of single- and multi-layered graphene in a way that more closely approximates operating devices. We demonstrate that the presence of the interfacial field significantly alters the capacitance in electrodes thinner than a few graphene layers, deriving in large part from intrinsic space-charge screening limitations. The capacitance is also found to be highly sensitive to the gap between the electrode and the solvent (contact layer), which offers possibilities for tuning the interfacial capacitance of the electrode by proper engineering of the electrolyte. Our results offer an alternative interpretation of discrepancies between experimental measurements and fixed-band models, and provide specific implications for improving graphene-based devices.