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Tadao Nagatsuma

Tadao Nagatsuma contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Exceeding octave tunable Terahertz waves with zepto-second level timing noise

Spectral purity of any millimeter wave (mmW) source is of the utmost interest in low-noise applications. Optical synthesis via photomixing is an attractive source for such mmWs, which usually involves expensive spectrally pure lasers with narrow linewidths approaching monochromaticity due to their inherent fabrication costs or specifications. Here, we report an alternative option for enhancing the spectral purity of inexpensive semiconductor diode lasers via a self-injection locking technique through corresponding Stokes waves from a fiber Brillouin cavity exhibiting greatly improved phase noise levels and large wavelength tunability of ~1.8 nm. We implement a system with two self-injected diode lasers on a common Brillouin cavity aimed at difference frequency generation in the mmW and THz region. We generate tunable sub-mmW (0.3 and 0.5 THz) waves by beating the self-injected two wavelength Stokes light on a uni-travelling carrier photodiode and characterize the noise performance. The sub-mmW features miniscule timing noise levels in the zepto-second (zs.Hz^-0.5) scale outperforming the state of the art dissipative Kerr soliton based micro-resonator setups while offering broader frequency tunability. These results suggest a viable inexpensive alternative for mmW sources aimed at low-noise applications featuring lab-scale footprints and rack-mounted portability while paving the way for chip-scale photonic integration.

preprint2022arXiv

Phase-resolved measurement and control of ultrafast dynamics in terahertz electronic oscillators

As a key component for next-generation wireless communications (6G and beyond), terahertz (THz) electronic oscillators are being actively developed. Precise and dynamic phase control of ultrafast THz waveforms is essential for high-speed beam steering and high-capacity data transmission. However, measurement of such ultrafast dynamic process is beyond the scope of electronics due to the limited bandwidth of the electrical measuring instruments. Here we surpass this limit by applying photonic technology. Using a femtosecond laser, we generate offset-free THz pulses to phase-lock the electronic oscillators based on a resonant tunneling diode. This enables us to perform phase-resolved measurement of the emitted THz electric field waveform in time-domain with sub-cycle time resolution. Ultrafast dynamic response such as anti-phase locking behaviour is observed, which is distinct from in-phase stimulated emission observed in laser oscillators. We also show that the dynamics follows the universal synchronization theory for limit cycle oscillators. This provides a basic guideline for dynamic phase control of THz electronic oscillators, enabling many key performance indicators to be achieved in the new era of 6G and beyond.

preprint2022arXiv

Terahertz Oscillator Chips Backside-coupled to Unclad Microphotonics

Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 409 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.

preprint2019arXiv

Effective-medium-cladded dielectric waveguides for terahertz communications

Terahertz communications is a promising modality for future short-range point-to point wireless data transmission at rates up to terabit per second. A milestone towards this goal is the development of an integrated transmitter and receiver platforms with high efficiency. One key enabling component is a planar waveguiding structure with wide bandwidth and low dispersion. This work proposes substrate-less all-dielectric waveguides cladded by an effective medium for low-loss and low dispersion terahertz transmission in broadband. This self-supporting structure is built solely into a single silicon wafer with air perforations to mitigate significant absorptions in metals and dielectrics at terahertz frequencies. The realized waveguides can cover the entire 260 to 400 GHz with single dominant modes in both orthogonal polarizations. The simulation shows that for the E_11^x mode the attenuation ranges from 0.003 to 0.024 dB/cm over the entire band, while it varies from 0.008 to 0.023 dB/cm for the E_11^y mode. Limited by the measurement setup, the maximum error-free data rate of 28 Gbit/s is experimentally achieved at 335 GHz on a 3-cm waveguide. We further demonstrate the transmission of uncompressed 4K-resolution video across this waveguide. This waveguide platform promises integration of diverse active and passive components. Thus, we can foresee it as a potential candidate for the future terahertz integrated circuits, in analogy to photonic integrated circuits at optical frequencies.

preprint2019arXiv

Terahertz topological photonics for on-chip communication

The computing speeds in modern multi-core processors and big data servers are no longer limited by the on-chip transistor density that doubles every two years following the Moores law, but are limited by the on-chip data communication between memories and microprocessor cores. Realization of integrated, low-cost, and efficient solutions for high speed, on-chip data communications require terahertz (THz) interconnect waveguides with tremendous significance in future THz technology including THz-wave integrated circuits and THz communication. However, conventional approaches to THz waveguiding suffer from sensitivity to defects and considerable bending losses at sharp bends. Here, building on the recently-discovered topological phase of light, we experimentally demonstrate robust THz topological valley transport on low-loss, all-silicon chips. We show that the valley polarized topological kink states exhibit unity transmission over a bulk band gap even after propagating through ten sharp corners. Such states are excellent information carriers due to their robustness, single-mode propagation, and linear dispersion-key properties for next generation THz communications. By leveraging the unique properties of kink states, we demonstrate error-free communication through a highly-twisted domain wall at an unprecedented data rate (10 Gbit/s) and uncompressed 4K high-definition video transmission. Our work provides the first experimental demonstration of the topological phases of THz wave, which could certainly inspire a plethora of research on different types of topological phases in two and three dimensions.