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Tadakatsu Ohkubo

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2025arXiv

Light-programmable reorientation of the crystallographic c-axis of Tellurium thin films

Tellurium (Te), a two-dimensional material with pronounced structural anisotropy, exhibits exceptional electrical and optical properties that are highly sensitive to its crystallographic orientation. However, conventional synthesis techniques offer limited control over the in-plane alignment of Te's crystallographic c-axis, hindering large-scale integration. Here, we report a novel, non-contact method to dynamically manipulate the c-axis orientation of Te thin films using linearly polarized picosecond laser pulses. We show that the c-axis can be omnidirectionally reoriented perpendicular to the laser polarization, even in initially polycrystalline films. This reorientation is fully reversible, allowing for rewritable and spatially selective control of the c-axis orientation post-deposition. Our light-driven approach enables programmable anisotropy in Te, opening new avenues for reconfigurable optoelectronic and photonic devices, such as active metasurfaces and CMOS-compatible architectures.

preprint2021arXiv

Deterministic influence of substrate-induced oxygen vacancy diffusion on $Bi_{2}WO_{6}$ thin film growth

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$ thin film grown by the pulsed laser deposition technique. We show that when grown on an oxygen-deficient $SrTiO_{3}$ substrate, the $Bi_{2}WO_{6}$ film exhibits a mixture of (001) and (100)/(010)-oriented domains alongside (001)-oriented impurity $WO_{3}$ phases. The (100)/(010)-oriented $Bi_{2}WO_{6}$ phases form a self-organized 3D nanopillar-structure, yielding a very rough film surface morphology. Oxygen annealing of the substrate or using a few monolayer-thick $SrRuO_{3}$ as the blocking layer for oxygen vacancy diffusion enables growing high-quality single-crystalline $Bi_{2}WO_{6}$ (001) thin film exhibiting an atomically smooth film surface with step-terrace structure. We propose that the large oxide-ion conductivity of $Bi_{2}WO_{6}$ facilitates diffusion of oxygen vacancies from the substrate during the film growth, accelerating the evaporation of volatile Bismuth (Bi), which hinders the epitaxial growth. Our work provides a general guideline for high-quality thin film growth of Aurivillius compounds and other oxide-ion conductors containing volatile elements.

preprint2020arXiv

Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.

preprint2020arXiv

Transient response of spin Peltier effect revealed by lock-in thermoreflectance measurement

Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE through the spin Hall effect, and measured the AC response of the resultant SPE-induced temperature modulation at frequencies ranging from 10 Hz to 1 MHz. We found that the SPE-induced temperature modulation decreases with increasing the frequency when the frequency is >1 kHz. This is a characteristic feature of SPE revealed by the high frequency measurements based on the lock-in thermoreflectance, while previous low frequency measurements showed that the SPE signal is independent of the frequency. We attribute the decrease of the temperature modulation to the length scale of the SPE-induced heat current; by comparing the experimental results with one-dimensional heat conduction calculations, the length scale of SPE is estimated to be 0.94 μm.

preprint2019arXiv

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.

preprint2016arXiv

Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy

The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-Fe-Al/Mg-Al-O structure near the Co2FeAl/MgO interface. This atomic replacement may play an additional role for enhancing PMA, which is consistent with the observed large perpendicular orbital magnetic moments of Fe atoms at the interface. This work suggests that control of interdiffusion at ferromanget/barrier interfaces is critical for designing an interface-induced PMA system.

preprint2015arXiv

Correlation between the spin Hall angle and the structural phases of early 5d transition metals

We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The spin Hall angle largest |θ$_{SH}$| of Hf, Ta, W and Re (~0.11, 0.10, 0.23 and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle.

preprint2014arXiv

A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance

An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low damping Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth with an unprecedentedly high crystal index, opening a unique pathway for the development of perpendicular anisotropy films of cubic and tetragonal ferromagnetic alloys.

preprint2012arXiv

Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As

We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.