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T. Tsuneta

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cond-mat.mes-hall cond-mat.supr-con

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preprint2007arXiv

Local and Non-local Shot Noise in Multiwalled Carbon Nanotubes

We have investigated shot noise in multiterminal, diffusive multiwalled carbon nanotubes (MWNTs) at 4.2 K over the frequency f = 600 - 850 MHz. Quantitative comparison of our data to semiclassical theory, based on non-equilibrium distribution functions, indicates that a major part of the noise is caused by a non-equilibrium state imposed by the contacts. Our data exhibits non-local shot noise across weakly transmitting contacts while a low-impedance contact eliminates such noise almost fully. We obtain F_{tube}< 0.03 for the intrinsic Fano factor of our MWNTs.

preprint2006arXiv

Gate-controlled superconductivity in diffusive multiwalled carbon nanotube

We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to I_cm = 1.3 nA, tunable by gate voltage down to 10 pA. The supercurrent branch displays a finite zero bias resistance which varies as R_0 proportional to I_cm^-alpha with alpha=0.74. Using IV-characteristics of junctions with phase diffusion, a good agreement is obtained with Josephson coupling energy in the long, diffusive junction model of A.D Zaikin and G.F. Zharkov (Sov. J. Low Temp. Phys. 7, 184 (1981)).

preprint2006arXiv

Shot noise of a multiwalled carbon nanotube field effect transistor

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $μ$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $μ{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.