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Researcher profile

T. Taniyama

T. Taniyama contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

5 published item(s)

preprint2016arXiv

Direct Evidence for Suppression of the Kondo Effect due to Pure Spin Current

We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using non-local lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the non-local spin signals shows a sharp reduction with decreasing temperature, followed by a plateau corresponding to the low temperature Fermi liquid regime below the Kondo temperature (TK). The spin diffusion length of the Kondo alloy is found to increase with the evolution of spin accumulation. The results are in agreement with the intuitive description that the Kondo singlet cannot survive any more in sufficiently large spin accumulation even below TK.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot

A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin-Related Current Suppression in a Semiconductor-Quantum-Dot Spin-Diode Structure

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature

We study the effect of the shape anisotropy on the magnetic domain configurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxial wire as a function of temperature. Using magnetoresistance measurements, we deduce the magnetic configurations and estimate the relative strength of the shape anisotropy compared with the intrinsic anisotropies. Since the intrinsic anisotropy is found to show a stronger temperature dependence than the shape anisotropy, the effect of the shape anisotropy on the magnetic domain configuration is relatively enhanced with increasing temperature. This information about the shape anisotropy provides a practical means of designing nanostructured spin electronic devices using (Ga,Mn)As.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations

We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 10^20 cm^-3 and 10^21 cm^-3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of <100> cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.

0 citations0 reviewsNo code linkedOpen access