Researcher profile

T. Simmet

T. Simmet contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Controlled tunneling induced dephasing of Rabi rotations for ultra-high fidelity hole spin initialization

We report the sub-picosecond initialization of a single heavy hole spin in a self-assembled quantum dot with >98.5 % fidelity and without external magnetic field. Using an optically adressable charge and spin storage device we tailor the relative electron and hole tunneling escape timescales from the dot and simultaneously achieve high-fidelity initialization, long hole storage times and high efficiency readout via a photocurrent signal. We measure electric field-dependent Rabi oscillations of the neutral and charged exciton transitions in the ultrafast tunneling regime and demonstrate that tunneling induced dephasing (TID) of excitonic Rabi rotations is the major source for the intensity damping of Rabi oscillations in the low Rabi frequency, low temperature regime. Our results are in very good quantitative agreement with quantum-optical simulations revealing that TID can be used to precisely measure tunneling escape times and extract changes in the Coulomb binding energies for different charge configurations of the quantum dot. Finally, we demonstrate that for sub-picosecond electron tunneling escape TID of a coherently driven exciton transition facilitates ultrafast hole spin initialization with near-unity fidelity.

preprint2015arXiv

Non-linear two-photon resonance fluorescence on a single artificial atom

We report two-photon resonance fluorescence of an individual semiconductor artificial atom. By non-linearly driving a single quantum dot via a two-photon transition, we probe the linewidth of the two-photon processes and show that, similar to their single-photon counterparts, they are close to being Fourier limited at low temperatures. The evolution of the population of excitonic states with the Rabi frequency exhibits a clear s-shaped behavior, indicative of the non-linear response via the two-photon excitation process. We model the non-linear response using a 4-level atomic system representing the manifold of excitonic and biexcitonic states of the quantum dot and show that quantitative agreement is obtained only by including the interaction with LA-phonons in the solid state environment. Finally, we demonstrate the formation of dressed states emerging from a two-photon interaction between the artificial atom and the excitation field. The non-linear optical dressing induces a mixing of all four excitonic states that facilitates the tuning of the polarization selection rules of the artificial atom.

preprint2015arXiv

Three stage decoherence dynamics of electron spin qubits in an optically active quantum dot

The control of discrete quantum states in solids and their use for quantum information processing is complicated by the lack of a detailed understanding of the mechanisms responsible for qubit decoherences. For spin qubits in semiconductor quantum dots, phenomenological models of decoherence currently recognize two Basic stages; fast ensemble dephasing due to the coherent precession of spin qubits around nearly static but randomly distributed hyperfine fields and a much slower process of irreversible relaxation of spin qubit polarization due to dynamics of the nuclear spin bath induced by complex many-body interaction effects. We unambiguosly demonstrate that such a view on decoherence is greatly oversimplified; the relaxation of a spin qubit state is determined by three rather than two basic stages. The additional stage corresponds to the effect of coherent dephasing processes that occur in the nuclear spin bath that manifests itself by a relatively fast but incomplete non-monotonous relaxation of the central spin polarization at intermediate timescales. This observation changes our understanding of the electron spin qubit decoherence mechanisms in solid state systems.