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Researcher profile

T. S. Rahman

T. S. Rahman contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

6 published item(s)

preprint2015arXiv

A tight-binding model for MoS$_2$ monolayers

We propose an accurate tight-binding parametrization for the band structure of MoS$_2$ monolayers near the main energy gap. We introduce a generic and straightforward derivation for the band energies equations that could be employed for other monolayer dichalcogenides. A parametrization that includes spin-orbit coupling is also provided. The proposed set of model parameters reproduce both the correct orbital compositions and location of valence and conductance band in comparison with ab initio calculations. The model gives a suitable starting point for realistic large-scale atomistic electronic transport calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ab initio lattice dynamics and electron-phonon coupling of Bi(111)

We present a comprehensive ab initio study of structural, electronic, lattice dynamical and electron-phonon coupling properties of the Bi(111) surface within density functional perturbation theory. Relativistic corrections due to spin-orbit coupling are consistently taken into account. As calculations are carried out in a periodic slab geometry, special attention is given to the convergence with respect to the slab thickness. Although the electronic structure of Bi(111) thin films varies significantly with thickness, we found that the lattice dynamics of Bi(111) is quite robust and appears converged already for slabs as thin as 6 bilayers. Changes of interatomic couplings are confined mostly to the first two bilayers, resulting in super-bulk modes with frequencies higher than the optic bulk spectrum, and in an enhanced density of states at lower frequencies for atoms in the first bilayer. Electronic states of the surface band related to the outer part of the hole Fermi surfaces exhibit a moderate electron-phonon coupling of about 0.45, which is larger than the coupling constant of bulk Bi. States at the inner part of the hole surface as well as those forming the electron pocket close to the zone center show much increased couplings due to transitions into bulk projected states near Gamma_bar. For these cases, the state dependent Eliashberg functions exhibit pronounced peaks at low energy and strongly deviate in shape from a Debye-like spectrum, indicating that an extraction of the coupling strength from measured electronic self-energies based on this simple model is likely to fail.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Stress balance in nano-patterned N/Cu(001) surfaces

We employ helium atom scattering (HAS) and density functional theory (DFT) based on the ultrasoft pseudopotential scheme and the plane-wave basis set to investigate the strain and stress balance in nano-patterned N/Cu(001) surfaces. HAS shows that, with increasing N coverage (and decreasing stripe widths), the stress-relief-driven lateral expansion of the averaged lattice parameter within finite-sized N-containing patches reduces from 3.5% to 1.8% and that, beyond a critical exposure, the lateral expansion of the patches increases again slightly, to 2.4%. The latter implies that in this higher coverage range the compressive stress is partially relieved via another mechanism, which turns out to be nucleation of Cu-vacancy trenches. In full agreement with the above and previous experimental observations, DFT calculations show that an optimized N-induced c(2\times2) structure has a net surface stress level of 4.2 N/m and such stress is effectively relieved when stripes of clean Cu(001) form along the <100> direction or when trench-like steps of Cu atoms form along the <110> direction. Additionally, the calculations demonstrate that (contrary to earlier suggestions) rumpling displacements within the outermost Cu layer do not act to relieve the compressive surface stress levels and that, while clock-like displacements could relieve stress levels, such displacements are energetically unstable.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Island Size Selectivity during 2D Ag Island Coarsening on Ag (111)

We report on early stages of submonolayer Ag island coarsening on Ag(111) surface at room temperature ($300$ K) carried out using realistic kinetic Monte Carlo (KMC) simulations. We find that during early stages, coarsening proceeds as a sequence of selected island sizes creating peaks and valleys in the island size distribution. We find that island-size selectivity is due to formation of kinetically stable islands for certain sizes because of adatom detachment/attachment processes and large activation barrier for kink detachment. In addition, we find that the ratio of number of adatom attachment to detachment processes to be independent of parameters of initial configuration and also on the initial shapes of the islands confirming that island-size selectivity is independent of initial conditions.These simulations were carried out using a very large database of processes identified by their local environment and whose activation barriers were calculated using the embedded-atom method.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Atom-by-atom extraction using scanning tunneling microscope tip-cluster interaction

We investigate atomistic details of a single atom extraction process realized by using scanning tunneling microscope (STM) tip-cluster interaction on a Ag(111) surface at 6 K. Single atoms are extracted from a silver cluster one atom at a time using small tunneling biases less than 35 mV and a threshold tunneling resistance of 47 kOhm. A combination of total energy calculations and molecular dynamics simulations shows a lowering of the atom extraction barrier upon approaching the tip to the cluster. Thus, a mere tuning of the proximity between the tip and the cluster governs the extraction process and is sufficient to extract an atom. The atomically precise control and reproducibility of the process are demonstrated by repeatedly extracting single atoms from a silver cluster on an atom-by-atom basis.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Diffusion and submonolayer island growth during hyperthermal deposition on Cu(100) and Cu(111)

We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To this end, we incorporate realistic size and temperature-dependent island diffusion coefficients for the case of homoepitaxial growth on Cu(100) and Cu(111) surfaces. We demonstrate that the generic features of growth remain unaffected by the details of island diffusion, thus validating the generic scenario of high density of small islands found experimentally and theoretically for large detachment rates. However, the details of the morphological transition and scaling of the mean island size are strongly influenced by the size dependence of island diffusion. This is reflected in the scaling exponent of the mean island size, which depends on both temperature and the surface geometry.

0 citations0 reviewsNo code linkedOpen access