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Researcher profile

B. J. Hinch

B. J. Hinch contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-ph

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Published work

2 published item(s)

preprint2013arXiv

Atomic scale friction of molecular adsorbates during diffusion

Experimental observations suggest that molecular adsorbates exhibit a larger friction coefficient than atomic species of comparable mass, yet the origin of this increased friction is not well understood. We present a study of the microscopic origins of friction experienced by molecular adsorbates during surface diffusion. Helium spin-echo measurements of a range of five-membered aromatic molecules, cyclopentadienyl (Cp), pyrrole and thiophene, on a copper(111) surface are compared with molecular dynamics simulations of the respective systems. The adsorbates have different chemical interactions with the surface and differ in bonding geometry, yet the measurements show that the friction is greater than 2 ps$^{-1}$ for all these molecules. We demonstrate that the internal and external degrees of freedom of these adsorbate species are a key factor in the underlying microscopic processes and identify the rotation modes as the ones contributing most to the total measured friction coefficient.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Stress balance in nano-patterned N/Cu(001) surfaces

We employ helium atom scattering (HAS) and density functional theory (DFT) based on the ultrasoft pseudopotential scheme and the plane-wave basis set to investigate the strain and stress balance in nano-patterned N/Cu(001) surfaces. HAS shows that, with increasing N coverage (and decreasing stripe widths), the stress-relief-driven lateral expansion of the averaged lattice parameter within finite-sized N-containing patches reduces from 3.5% to 1.8% and that, beyond a critical exposure, the lateral expansion of the patches increases again slightly, to 2.4%. The latter implies that in this higher coverage range the compressive stress is partially relieved via another mechanism, which turns out to be nucleation of Cu-vacancy trenches. In full agreement with the above and previous experimental observations, DFT calculations show that an optimized N-induced c(2\times2) structure has a net surface stress level of 4.2 N/m and such stress is effectively relieved when stripes of clean Cu(001) form along the <100> direction or when trench-like steps of Cu atoms form along the <110> direction. Additionally, the calculations demonstrate that (contrary to earlier suggestions) rumpling displacements within the outermost Cu layer do not act to relieve the compressive surface stress levels and that, while clock-like displacements could relieve stress levels, such displacements are energetically unstable.

0 citations0 reviewsNo code linkedOpen access