Researcher profile

T. Roch

T. Roch contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

preprint2011arXiv

Direct creation of micro-domains with positive and negative surface potential on hydroxyapatite coatings

A method for the direct patterning of electrostatic potential at the surface of hydroxyapatite is presented here. Micro-domains of surface potential have been created on hydroxyapatite coatings by a 20 keV focused electron beam with minimal alterations of surface chemistry. The success of such approach has been confirmed by Kelvin Probe Force Microscopy measurements, which show that this method is capable of creating micron sized positive and negative local electrostatic potential. The shape and potential difference of these domains were found to depend on the dose of total injected charge from the electron beam as well as the speed with which such charge is injected.

preprint2010arXiv

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.