Researcher profile

T. Ohtsuki

T. Ohtsuki contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2011arXiv

Critical exponent for the quantum spin Hall transition in Z_2 network model

We have estimated the critical exponent describing the divergence of the localization length at the metal-quantum spin Hall insulator transition. The critical exponent for the metal-ordinary insulator transition in quantum spin Hall systems is known to be consistent with that of topologically trivial symplectic systems. However, the precise estimation of the critical exponent for the metal-quantum spin Hall insulator transition proved to be problematic because of the existence, in this case, of edge states in the localized phase. We have overcome this difficulty by analyzing the second smallest positive Lyapunov exponent instead of the smallest positive Lyapunov exponent. We find a value for the critical exponent $ν=2.73 \pm 0.02$ that is consistent with that for topologically trivial symplectic systems.

preprint2010arXiv

Conductance distributions in disordered quantum spin-Hall systems

We study numerically the charge conductance distributions of disordered quantum spin-Hall (QSH) systems using a quantum network model. We have found that the conductance distribution at the metal-QSH insulator transition is clearly different from that at the metal-ordinary insulator transition. Thus the critical conductance distribution is sensitive not only to the boundary condition but also to the presence of edge states in the adjacent insulating phase. We have also calculated the point-contact conductance. Even when the two-terminal conductance is approximately quantized, we find large fluctuations in the point-contact conductance. Furthermore, we have found a semi-circular relation between the average of the point-contact conductance and its fluctuation.

preprint2010arXiv

Femtosecond core level photoemision spectroscopy on 1T-TaS2 using 60 eV laser source

Time-resolved photoelectron spectroscopy (trPES) can directly detect transient electronic structure, thus bringing out its promising potential to clarify nonequilibrium processes arising in condensed matters. Here we report the result of core-level (CL) trPES on 1T-TaS2, realized by developing a high-intensity 60 eV laser obtained by high-order harmonic (HH) generation. Ta4f CL-trPES offers the transient amplitude of the charge-density-wave (CDW), via the site-selective and real-time observation of Ta electrons. The present result indicates an ultrafast photoinduced melting and recovery of CDW amplitude, followed by a peculiar long-life oscillation (i.e. collective amplitudon excitation) accompanying the transfer of 0.01 electrons among adjacent Ta atoms. CL-trPES offers a broad range of opportunities for investigating the ultrafast atom-specific electron dynamics in photo-related phenomena of interest.

preprint2010arXiv

Nanoscale Dichotomy of Ti 3d Carriers Mediating the Ferromagnetism in Co:TiO2 Anatase Thin Films

We study the surface and bulk electronic structure of the room-temperature ferromagnet Co:TiO2 anatase films using soft and hard x-ray photoemission spectroscopy with probe sensitivities of ~1 nm and ~10 nm, respectively. We obtain direct evidence of metallic Ti$^{3+}$ states in the bulk, which get suppressed to give a surface semiconductor, thus indicating a surface-bulk dichotomy. X-ray absorption and high-sensitivity resonant photoemission spectroscopy reveal Ti$^{3+}$ electrons at the Fermi level (E$_F$) and high-spin Co$^{2+}$ electrons occurring away from E$_F$. The results show the importance of the charge neutrality condition: Co$^{2+}$ + V$_{O}$$^{2-}$ + 2Ti$^{4+}$ $\leftrightarrow$ Co$^{2+}$ + 2Ti$^{3+}$ (V$_O$ is oxygen vacancy), which gives rise to the elusive Ti 3d carriers mediating ferromagnetism via the Co 3d-O 2p-Ti 3d exchange interaction pathway of the occupied orbitals.