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Researcher profile

T. O. Wehling

T. O. Wehling contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2012arXiv

Local Gating of an Ir(111) Surface Resonance by Graphene Islands

The influence of graphene islands on the electronic structure of the Ir(111) surface is investigated. Scanning tunneling spectroscopy (STS) indicates the presence of a two-dimensional electron gas with a binding energy of -160meV and an effective mass of -0.18m_e underneath single-layer graphene on the Ir(111) surface. Density functional calculations reveal that the STS features are predominantly due to a holelike surface resonance of the Ir(111) substrate. Nanometer-sized graphene islands act as local gates, which shift and confine the surface resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Adhesion and electronic structure of graphene on hexagonal boron nitride substrates

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion energies for different crystallographic stacking configurations and show that the interlayer bonding is due to long-range van der Waals forces. The interplay of elastic and adhesion energies is shown to lead to stacking disorder and moiré structures. Band structure calculations reveal substrate induced mass terms in graphene which change their sign with the stacking configuration. The dispersion, absolute band gaps and the real space shape of the low energy electronic states in the moiré structures are discussed. We find that the absolute band gaps in the moiré structures are at least an order of magnitude smaller than the maximum local values of the mass term. Our results are in agreement with recent STM experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spectral functions of isolated Ce adatoms on paramagnetic surfaces

We report photoemission experiments revealing the full valence electron spectral function of Ce adatoms on Ag(111), W(110) and Rh(111) surfaces. A transfer of Ce 4f spectral weight from the ionization peak towards the Fermi level is demonstrated upon changing the substrate from Ag(111) to Rh(111). In the intermediate case of Ce on W(110) the ionization peak is found to be split. This evolution of the spectra is explained by means of first-principles theory which clearly demonstrates that a reliable understanding of magnetic adatoms on metal surfaces requires simultaneous low and high energy spectroscopic information.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transition metal ad-atoms on graphene: Influence of local Coulomb interactions on chemical bonding and magnetic moments

We address the interaction of graphene with 3d transition metal adatoms and the formation of localized magnetic moments by means of first-principles calculations. By comparing calculations within the generalized gradient approximation (GGA) to GGA+U we find that the electronic configuration and the adsorption geometries can be very sensitive to effects of local Coulomb interactions U in the transition metal d-orbitals. We find high-spin configurations being favorable for Cr and Mn adatoms independent of the functional. For Fe, Co and Ni different electronic configurations are realized depending on the value of the local Coulomb interaction strength U. Chemical control over the spin of the adatoms by hydrogenation is demonstrated: NiH and CoH adsorbed to graphene exhibit spin S=1/2 and S=1, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Double Counting in LDA+DMFT - The Example of NiO

An intrinsic issue of the LDA+DMFT approach is the so called double counting of interaction terms. How to choose the double-counting potential in a manner that is both physically sound and consistent is unknown. We have conducted an extensive study of the charge transfer system NiO in the LDA+DMFT framework using quantum Monte Carlo and exact diagonalization as impurity solvers. By explicitly treating the double-counting correction as an adjustable parameter we systematically investigated the effects of different choices for the double counting on the spectral function. Different methods for fixing the double counting can drive the result from Mott insulating to almost metallic. We propose a reasonable scheme for the determination of double-counting corrections for insulating systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

General DFT++ method implemented with projector augmented waves: Electronic structure of SrVO$_3$ and the Mott Transition in Ca$_{2-x}$Sr$_{x}$RuO$_4$

The realistic description of correlated electron systems has taken an important step forward a few years ago as the combination of density functional methods and the dynamical mean-field theory was conceived. This framework allows access to both high and low energy physics and is capable of the description of the specific physics of strongly correlated materials, like the Mott metal-insulator transition. A very important step in the procedure is the interface between the band structure method and the dynamical mean-field theory and its impurity solver. We present a general interface between a projector augmented wave based density functional code and many-body methods based on Wannier functions obtained from a projection on local orbitals. The implementation is very flexible and allows for various applications. Quantities like the momentum resolved spectral function are accessible. We present applications to SrVO$_3$ and the metal-insulator transition in Ca$_{2-x}$Sr$_{x}$RuO$_4$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nature of the Mott transition in Ca2RuO4

We study the origin of the temperature-induced Mott transition in Ca2RuO4. As a method we use the local-density approximation+dynamical mean-field theory. We show the following. (i) The Mott transition is driven by the change in structure from long to short c-axis layered perovskite (L-Pbca to S-Pbca); it occurs together with orbital order, which follows, rather than produces, the structural transition. (ii) In the metallic L-Pbca phase the orbital polarization is ~0. (iii) In the insulating S-Pbca phase the lower energy orbital, ~xy, is full. (iv) The spin-flip and pair-hopping Coulomb terms reduce the effective masses in the metallic phase. Our results indicate that a similar scenario applies to Ca_{2-x}Sr_xRuO_4 (x<0.2). In the metallic x< 0.5 structures electrons are progressively transferred to the xz/yz bands with increasing x, however we find no orbital-selective Mott transition down to ~300 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Orbitally controlled Kondo effect of Co ad-atoms on graphene

Based on ab-initio calculations we identify possible scenarios for the Kondo effect due to Co ad-atoms on graphene. General symmetry arguments show that for magnetic atoms in high-symmetry positions, the Kondo effect in graphene is controlled not only by the spin but also by the orbital degree of freedom. For a Co atom absorbed on top of a carbon atom, the Kondo effect is quenched by spin-orbit coupling below an energy scale of $\sim 15$\,K. For Co with spin $S=1/2$ located in the center of a hexagon, an SU(4) Kondo model describes the entanglement of orbital moment and spin at higher energies, while below \sim 60$\,meV spin-orbit coupling leads to a more conventional SU(2) Kondo effect. The interplay of the orbital Co physics and the peculiar band-structure of graphene is directly accessible in Fourier transform tunneling spectroscopy or in the gate-voltage dependence of the Kondo temperature displaying a very strong, characteristic particle-hole asymmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Resonant scattering by realistic impurities in graphene

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as ad-atoms like H absorbed to graphene are shown to create midgap states within +-0.03eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Molecular Doping of Graphene

Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambient conditions [1-4]. The latter makes graphene a promising material for future electronics and the recently demonstrated possibility of chemical doping without significant change in mobility has improved graphene&#39;s prospects further [13]. However, to find optimal dopants and, more generally, to progress towards graphene-based electronics requires understanding the physical mechanism behind the chemical doping, which has been lacking so far. Here, we present the first joint experimental and theoretical investigation of adsorbates on graphene. We elucidate a general relation between the doping strength and whether or not adsorbates have a magnetic moment: The paramagnetic single NO2 molecule is found to be a strong acceptor, whereas its diamagnetic dimer N2O4 causes only weak doping. This effect is related to the peculiar density of states of graphene, which provides an ideal situation for model studies of doping effects in semiconductors. Furthermore, we explain recent results on its &#34;chemical sensor&#34; properties, in particular, the possibility to detect a single NO2 molecule [13].

0 citations0 reviewsNo code linkedOpen access