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T. Nanba

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cond-mat.str-el cond-mat.mtrl-sci

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preprint2012arXiv

Optical Conductivity and Electronic Structure of CeRu4Sb12 under High Pressure

Optical conductivity [s(w)] of Ce-filled skutterudite CeRu4Sb12 has been measured at high pressure to 8 GPa and at low temperature, to probe the pressure evolution of its electronic structures. At ambient pressure, a mid-infrared peak at 0.1 eV was formed in s(w) at low temperature, and the spectral weight below 0.1 eV was strongly suppressed, due to a hybridization of the f electron and conduction electron states. With increasing external pressure, the mid-infrared peak shifts to higher energy, and the spectral weight below the peak was further depleted. The obtained spectral data are analyzed in comparison with band calculation result and other reported physical properties. It is shown that the electronic structure of CeRu4Sb12 becomes similar to that of a narrow-gap semiconductor under external pressure.

preprint2010arXiv

Pressure-temperature phase diagram of charge ordering in Nd1/2Sr1/2MnO3

We observe how the charge-ordering (CO) temperature of Nd1/2Sr1/2MnO3 decreases with the external pressure p from 160 K at p = 0 down to 30 K at p ~ 4.5 GPa, by measuring the values p, T where the far-infrared spectral weight of the metallic phase is fully recovered. We thus determine the (p, T) phase diagram of CO in that manganite. We also find that the parameter d(lnTCO)/dp which describes this metallization from the CO phase is equal and opposite to the quantity d(lnTc)/dp which governs the metallization of the paramagnetic state at comparable Curie temperatures Tc, in similar manganites at half doping.

preprint2009arXiv

Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS

Optical conductivity [$σ(ω)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $σ(ω)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $σ(ω)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pressure has caused an energy overlap and hybridization between the $c$ band and 4$f$ state, thus driving the initially ionic and insulating YbS into a correlated metal with heavy carriers.

preprint2007arXiv

Universal scaling in the dynamical conductivity of heavy fermion Ce and Yb compounds

Dynamical conductivity spectra s(w) have been measured for a diverse range of heavy-fermion (HF) Ce and Yb compounds. A characteristic excitation peak has been observed in the mid-infrared region of s(w) for all the compounds, and has been analyzed in terms of a simple model based on conduction (c)-f electron hybridized band. A universal scaling is found between the observed peak energies and the estimated c-f hybridization strengths of these HF compounds. This scaling demonstrates that the model of c-f hybridized band can generally and quantitatively describe the charge excitation spectra of a wide range of HF compounds.

preprint2006arXiv

Pressure-tuning of the c-f hybridization in Yb metal detected by infrared spectroscopy up to 18 GPa

It has been known that the elemental Yb, a divalent metal at mbient pressure, becomes a mixed-valent metal under external pressure, with its valence reaching ~2.6 at 30 GPa. In this work, infrared spectroscopy has been used to probe the evolution of microscopic electronic states associated with the valence crossover in Yb at external pressures up to 18 GPa. The measured infrared reflectivity spectrum R(w) of Yb has shown large variations with pressure. In particular, R(w) develops a deep minimum in the mid-infrared, which shifts to lower energy with increasing pressure. The dip is attributed to optical absorption due to a conduction c-f electron hybridization state, similarly to those previously observed for heavy fermion compounds. The red shift of the dip indicates that the $c$-$f$ hybridization decreases with pressure, which is consistent with the increase of valence.