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T. Muranaka

T. Muranaka appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.str-el

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Published work

3 published item(s)

preprint2010arXiv

Pressure-induced high-Tc superconducting phase in FeSe: correlation between anion height and Tc

In this study, we performed high-pressure electrical resistivity measurements of polycrystalline FeSe in the pressure range of 1-16.0 GPa at temperatures of 4-300 K. A precise evaluation of Tc from zero-resistivity temperatures revealed that Tc shows a slightly distorted dome-shaped curve, with maximum Tc (30 K) at 6 GPa, which is lower than a previously reported Tc value (~37 K). With the application of pressure, the temperature dependence of resistivity above Tc changes dramatically to a linear dependence; a non-Fermi-liquid-like "high-Tc" phase appears above 3 GPa. We found a striking correlation between Tc and the Se height: the lower the Se height, the more enhanced is Tc. Moreover, this relation is broadly applicable to other iron pnictides, strongly indicating that high-temperature superconductivity can appear only around the optimum anion height (~1.38A). On the basis of these results, we suggest that the anion height should be considered as a key determining factor of Tc of iron-based superconductors containing various anions.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

AC susceptibility study of superconducting aluminium-doped silicon carbide

In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon carbide was successfully found to superconduct by means of resistivity and DC magnetization measurements. In contrast to boron-doped silicon carbide, the aluminum doped system is treated as a type-II superconductor because of the absence of an hysteresis in data measured upon decreasing and increasing temperature in finite magnetic fields. In this paper, results of a recent AC susceptibility study on aluminum-doped silicon carbide are presented. In higher applied DC magnetic fields and at low temperatures, a weak indication of supercooling with a width of a few mK is found. This supports the conclusion that aluminum-doped silicon carbide is located near to the border between type-I and type-II superconductivity, as pointed out in a recent theoretical work, too.

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preprint2009arXiv

Specific heat of aluminium-doped superconducting silicon carbide

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

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