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T. Moriyama

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.comp-ph

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preprint2019arXiv

Spin-orbit torque based physical unclonable function

This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and with micromagnetic simulations that this random state is driven by the intrinsic nonlinear dynamics of the free layer of the memory excited by the SOT. In detail, a large enough current drives the magnetization along an in-plane direction. Once the current is removed, the in-plane magnetic state becomes unstable evolving towards one of the two perpendicular stable configurations randomly. In addition, an hybrid CMOS/spintronics model is used to evaluate the electrical characteristics of a PUF realized with an array of 16x16 SOT-MRAM cells. Beyond robustness against voltage and temperature variations, hardware authentication based on this PUF scheme has additional advantages over other PUF technologies such as non-volatility (no power consumption in standby mode), reconfigurability (the secret can be rewritten), and scalability. We believe that this work is a step forward the design of spintronic devices for application in security.

preprint2016arXiv

Current-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process

Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latter transfer mechanism has been largely ignored. Here we report on experimental evidence concerning the energy transfer in ferromagnet/heavy metal bilayers. The magnetoresistance (MR) is found to depend significantly on the current direction down to low in-plane currents, for which STT cannot play any significant role. Instead we find that the observed MR is consistent with the energy transfer mechanism through the quantum spin-flip process, which predicts short wavelength, current-direction-dependent magnon excitations in the THz frequency range. Our results unveil another aspect of current-induced magnetic excitation, and open a channel for the dc-current-induced generation of THz magnons.

preprint2016arXiv

Switching local magnetization by electric-field-induced domain wall motion

Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.

preprint2015arXiv

Extraction of the Anomalous Nernst Effect in the Electric Measurement of the Spin Orbit Torque

Spin orbit torque has been intensively investigated because of its high energy efficiency in manipulating a magnetization. Although various methods for measuring the spin orbit torque have been developed so far, the measurement results often show inconsistency among the methods, implying that an electromotive force, such as Nernst effect, irrelevant to the spin orbit torque may affect the measurement results as an artifact. In this letter, we developed a unique method to distinguish the spin orbit torque and the anomalous Nernst effect. The measurement results show that the spin orbit torque can be underestimated up to 50% under the influence of the anomalous Nernst effect.

preprint2015arXiv

Micro-focused Brillouin light scattering study of the magnetization dynamics driven by Spin Hall effect in a transversely magnetized NiFe nanowire

We employed micro-focused Brillouin light scattering to study the amplification of the thermal spin wave eigenmodes by means of a pure spin current, generated by the spin-Hall effect, in a transversely magnetized Pt(4nm)/NiFe(4nm)/SiO2(5nm) layered nanowire with lateral dimensions 500x2750 nm2. The frequency and the cross section of both the center (fundamental) and the edge spin wave modes have been measured as a function of the intensity of the injected dc electric current. The frequency of both modes exhibits a clear redshift while their cross section is greatly enhanced on increasing the intensity of the injected dc. A threshold-like behavior is observed for a value of the injected dc of 2.8 mA. Interestingly an additional mode, localized in the central part of the nanowire, appears at higher frequency on increasing the intensity of the injected dc above the threshold value. Micromagnetic simulations were used to quantitatively reproduce the experimental results and to investigate the complex non-linear dynamics induced by the spin-Hall effect, including the modification of the spatial profile of the spin wave modes and the appearance of the extra mode above the threshold.

preprint2013arXiv

Carrier density modulation in graphene underneath Ni electrode

We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni double-layered structure has shown a graphene-like back-gate bias dependence. In other words, the electrical properties of graphene are not significantly affected by its contact with Ni. This unexpected result may be ascribed to resist residuals at the metal/graphene interface, which may reduce the interaction between graphene and metals. In a back-gate device fabricated using the conventional lithography technique with an organic resist, the carrier density modulation in the graphene underneath the metal electrodes should be considered when discussing the metal/graphene contact.