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Researcher profile

T. M. Lu

T. M. Lu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.dis-nnphysics.app-phphysics.ins-detquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis

Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.

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preprint2011arXiv

Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry

We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion.

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preprint2011arXiv

Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well

We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the conductivity $σ$ displays non-monotonic temperature dependence. After an initial decrease at high temperatures, $σ$ first increases with decreasing temperature T, showing a metallic behavior. As T continues decreasing, a downturn in $σ$ is observed. This downturn shifts to a lower T at higher densities. More interestingly, the downturn temperature shows a power law dependence on the mobility at the downturn position, suggesting that a similar downturn is also expected to occur deep in the apparent metallic regime at albeit experimentally inaccessible temperatures. This thus hints that the observed metallic phase in 2D systems might be a finite temperature effect.

0 citations0 reviewsNo code linkedOpen access