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Researcher profile

T. L. Reinecke

T. L. Reinecke contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherquant-ph

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Published work

5 published item(s)

preprint2013arXiv

Fast Two-Qubit Gates in Semiconductor Quantum Dots using a Photonic Microcavity

Implementations for quantum computing require fast single- and multi-qubit quantum gate operations. In the case of optically controlled quantum dot qubits theoretical designs for long-range two- or multi-qubit operations satisfying all the requirements in quantum computing are not yet available. We have developed a design for a fast, long-range two-qubit gate mediated by a photonic microcavity mode using excited states of the quantum dot-cavity system that addresses these needs. This design does not require identical qubits, it is compatible with available optically induced single qubit operations, and it advances opportunities for scalable architectures. We show that the gate fidelity can exceed 90% in experimentally accessible systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical control of coherent interactions between quantum dot electron spins

Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron spins within an inhomogeneous InGaAs quantum dot ensemble. The spin dynamics are monitored through their precession about an external magnetic field. These measurements demonstrate spin precession phase shifts and modulations of the magnitude of one subset of oriented spins after optical orientation of the second subset. The observations are consistent with results from a model using a Heisenberg-like interaction with microeV-strength.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Ultrafast optical rotations of electron spins in quantum dots

Coherent manipulation of quantum bits (qubits) on time scales much shorter than the coherence time is a key prerequisite for quantum information processing. Electron spins in quantum dots (QDs) are particularly attractive for implementations of qubits. Efficient optical methods for initialization and readout of spins have been developed in recent years. Spin coherence times in the microsecond range have been demonstrated, so that spin control by picosecond optical pulses would be highly desirable. Then a large number of spin rotations could be performed while coherence is maintained. A major remaining challenge is demonstration of such rotations with high fidelity. Here we use an ensemble of QD electron spins focused into a small number of precession modes about a magnetic field by periodic optical pumping. We demonstrate ultrafast optical rotations of spins about arbitrary axes on a picosecond time scale using laser pulses as control fields.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin Fine Structure in Optically Excited Quantum Dot Molecules

The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.

0 citations0 reviewsNo code linkedOpen access