Researcher profile

T. Kramer

T. Kramer contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Design of a new SPS injection system via numerical optimisation

The Super Proton Synchrotron (SPS) injection system plays a fundamental role to preserve the quality of injected high-brightness beams for the Large Hadron Collider (LHC) physics program and to maintain the maximum storable intensity. The present system is the result of years of upgrades and patches of a system not conceived for such intensities and beam qualities. In this study, we propose the design of a completely new injection system for the SPS using multi-level numerical optimisation, including realistic hardware assumptions. We also present how this hierarchical optimisation framework can be adapted to other situations for optimal accelerator system design.

preprint2019arXiv

Fast high-power thyristors triggered in impact-ionization wave mode

GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required. Implementation of the impact-ionization triggering in GTO-like thyristor enhances its switching performance and gives new information about semiconductor physics. In this work thyristors of 5STH-2045H0002 type triggered in impact-ionization wave mode are investigated. An SOS generator providing a dV/dt of several kV/ns was used as a source of triggering pulses. A thyristor switching time of approximately 200-300 ps was observed. Maximum discharge parameters were obtained for two series connected thyristors at a charging voltage of 10 kV, and a capacitor stored energy of ~300 J: peak current of 43 kA, dI/dt of 120 kA/us (limited by the discharge circuit), FWHM of 1.5 us. A single thyristor was tested in the repetitive mode at the charging voltage of 4.2 kV, and the stored energy of 18 J: peak current of 5.5 kA, dI/dt of 40 kA/us, FWHM of 1.5 us were obtained. No thyristor degradation was observed after more than one million pulses at a PRF up to 1 kHz in burst mode. Thyristor recovery time was ~250 us. The switching efficiency was up to 98% depending on dV/dt and stored energy.