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T. Gupta

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Published work

2 published item(s)

preprint2016arXiv

Transduction between electrical energy and the heat in a carbon nanotube using a voltage-controlled doping

High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon transport limits their capability for transforming energy between the heat and electricity. Here we show that increasing the charge carrier concentrations not only leads to an increase of both electric conductivity and Seebeck coeffcient, but also causes a substantial suppression of the thermal conductivity due to intensifying the phonon-electron collisions. A strong transduction effect corresponding to an effective electron temperature change ~115 K was observed in a CNT device, where the local gate electrodes have controlled the charge doping in the opposite ends. Transduction between the heat and the energy of the electron subsystem corresponds to an impressive figure of merit cold ZT ~ 6 and the transduced power density P ~ 80kW/cm2.

preprint2013arXiv

Influence of spin fluctuations near the Mott transition: a DMFT study

Dynamics of magnetic moments near the Mott metal-insulator transition is investigated by a combined slave-rotor and Dynamical Mean-Field Theory solution of the Hubbard model with additional fully-frustrated random Heisenberg couplings. In the paramagnetic Mott state, the spinon decomposition allows to generate a Sachdev-Ye spin liquid in place of the collection of independent local moments that typically occurs in the absence of magnetic correlations. Cooling down into the spin-liquid phase, the onset of deviations from pure Curie behavior in the spin susceptibility is found to be correlated to the temperature scale at which the Mott transition lines experience a marked bending. We also demonstrate a weakening of the effective exchange energy upon approaching the Mott boundary from the Heisenberg limit, due to quantum fluctuations associated to zero and doubly occupied sites.