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T. F. Krauss

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physics.optics cond-mat.mes-hall cond-mat.stat-mech

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preprint2015arXiv

Optical performance monitoring at 640Gb/s via slow-light in a silicon nanowire

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 micron) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640 Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

preprint2014arXiv

Ultrafast reflectivity modulation in AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides

We report an ultrafast optical tuning of the reflectivity of AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides using a reflection geometry, pump-probe technique.

preprint2013arXiv

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow (Δλ = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.

preprint2012arXiv

Chaos-assisted, broadband trapping of light in optical resonators

Chaos is a phenomenon that occurs in many aspects of contemporary science. In classical dynamics, chaos is defined as a hypersensitivity to initial conditions. The presence of chaos is often unwanted, as it introduces unpredictability, which makes it difficult to predict or explain experimental results. Conversely, we demonstrate here how chaos can be used to enhance the ability of an optical resonator to store energy. We combine analytic theory with ab-initio simulations and experiments in photonic crystal resonators to show that a chaotic resonator can store six times more energy than its classical counterpart of the same volume. We explain the observed increase with the equipartition of energy among all degrees of freedom of the chaotic resonator, i.e. the cavity modes, which is evident from the convergence of their lifetime towards a single value. A compelling illustration of the theory is provided by demonstrating enhanced absorption in deformed polystyrene microspheres.

preprint2011arXiv

Lifetime statistics of quantum chaos studied by a multiscale analysis

In a series of pump and probe experiments, we study the lifetime statistics of a quantum chaotic resonator when the number of open channels is greater than one. Our design embeds a stadium billiard into a two dimensional photonic crystal realized on a Silicon-on-insulator substrate. We calculate resonances through a multiscale procedure that combines graph theory, energy landscape analysis and wavelet transforms. Experimental data is found to follow the universal predictions arising from random matrix theory with an excellent level of agreement.