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Sushant Shendre

Sushant Shendre contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Highly-directional, highly-efficient solution-processed light-emitting diodes of all-face-down oriented colloidal quantum wells

Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with face-down orientation as an emissive layer (EML) in an electroluminescent device is expected to substantially boost photon outcoupling efficiency. Here, we show all-solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) using a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that enables a high level of in-plane (IP) TDMs of 92%. This SAM film significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) and charge injection efficiency. This SAM-CQW-LED architecture enables a record high level of external quantum efficiency of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. In addition, this architecture provides a high maximum brightness of 19,800 cd/m2 with a long operational lifetime of 247 h at 100 cd/m2 along with saturated deep-red emission (651 nm). These findings indicate the effectiveness of oriented self-assembly of CQWs as electrically-driven emissive layers in improving outcoupling and external quantum efficiencies in the CQW-LEDs.

preprint2019arXiv

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable light-generation including colloidal lasers. However, application relying on their optical gain suffer from a fundamental complication due to multi-excitonic nature of light amplification in common II-VI semiconductor nanocrystals. This undesirably increases the optical gain threshold and shortens the net gain lifetime because of fast nonradiative Auger decay. Here, we demonstrate sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient alloyed shell colloidal quantum wells. This sub-single exciton ensemble-averaged gain threshold of Ng = 0.80 (per particle) resulting from impeded Auger recombination along with a large absorption cross-section of quantum wells enables us to observe the amplified spontaneous emission starting at a low pump fluence of 800 nJ cm-2, at least three-folds better than the previously best reported values among all colloidal semiconductor nanocrystals. Moreover, long optical gain lifetimes of 800 ps accompanied with modal gain coefficients of 2,000 cm-1 are achieved. Finally, using these gradient shelled quantum wells, we show a vertical cavity surface-emitting colloidal laser operating at an ultralow lasing threshold of 7.5 micro-joule cm-2. These results represent a significant step towards the realization of solution-processable electrically-driven colloidal lasers.