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Surajit Sarkar

Surajit Sarkar contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con physics.app-ph

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preprint2020arXiv

Resistive Switching Behaviour of Organic Molecules

Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive switching devices surely will play a key role. In this paper an effort has been made to illustrate the general information about resistive switching devices as well as switching mechanisms involving organic materials. As a whole a general overview of the emerging topic resistive switching has been given.

preprint2019arXiv

Dynamics of impurity in the environment of Dirac fermions

We study the dynamics of a non-magnetic impurity interacting with the surface states of a 3D and 2D topological insulator. Employing the linked cluster technique we develop a formalism for obtaining the Greens function of the mobile impurity interacting with the low-energy Dirac fermions. We show that for the non-recoil case in 2D, similar to the case involving the parabolic spectrum, the Greens function in the long-time limit has a power-law decay in time implying the breakdown of the quasiparticle description of the impurity. The spectral function, in turn, exhibits a weak power-law singularity. In the recoil case, however, the reduced phase-space for scattering processes implies a non-zero quasiparticle weight and the presence of a coherent part in the spectral function. Performing a weak coupling analysis we find that the mobility of the impurity reveals a divergence at low temperatures. In addition, we show that the Greens function of an impurity interacting with the helical edge modes (surface states of 2D TI), exhibit power-law decay in the long-time limit for both the non-recoil and recoil case (with low impurity momentum), indicating the break down of the quasiparticle picture. However, for impurity with high momentum, the quasiparticle picture is restored. Using the Boltzmann approach we show that the presence of the magnetic field results in a power-law divergence of the impurity mobility at low-temperatures.

preprint2016arXiv

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

We theoretically study the properties of thermal conductance in a normal-insulator-superconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential dependence on temperature, it manifests a nontrivial oscillatory dependence on the strength of the barrier region. The tunability of the thermal conductance by an external electric field is also investigated. Moreover, we explore the effect of doping concentration on thermal conductance. In the thin barrier limit, the period of oscillations of the thermal conductance as a function of the barrier strength comes out be $π/2$ when doping concentration in the normal silicene region is small. On the other hand, the period gradually converts to $π$ with the enhancement of the doping concentration. Such change of periodicity of the thermal response with doping can be a possible probe to identify the crossover from specular to retro Andreev reflection in Dirac materials. In the thick barrier limit, thermal conductance exhibits oscillatory behavior as a function of barrier thickness $d$ and barrier height $V_0$ while the period of oscillation becomes $V_0$ dependent. However, amplitude of the oscillations, unlike in tunneling conductance, gradually decays with the increase of barrier thickness for arbitrary height $V_0$ in the highly doped regime. We discuss experimental relevance of our results.

preprint2016arXiv

Tunneling Conductance in Normal-Insulator-Superconductor junctions of Silicene

We theoretically investigate the transport properties of a normal-insulator-superconductor (NIS) junction of silicene in the thin barrier limit. Similar to graphene the tunneling conductance in such NIS structure exhibits an oscillatory behavior as a function of the strength of the barrier in the insulating region. However, unlike in graphene, the tunneling conductance in silicene can be controlled by an external electric field owing to its buckled structure. We also demonstrate the change in behavior of the tunneling conductance across the NIS junction as we change the chemical potential in the normal silicene region. In addition, at high doping levels in the normal region, the period of oscillation of the tunneling conductance as a function of the barrier strength changes from $π/2$ to $π$ with the variation of doping in the superconducting region of silicene.

preprint2012arXiv

Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical behavior of magnetoelectric gallium ferrite. Optical properties such as band-gap, refractive indices and dielectric constants were experimentally obtained by performing ellipsometric studies over the energy range 0.8 eV to 4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data was compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site-disorder in the experimentally derived strained GaFeO3 films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe3d states leading to a lowered band-gap of the material.