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Surabala Mishra

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cond-mat.mtrl-sci

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preprint2015arXiv

Effects of structural distortion on electronic and optical properties of defect CdGa_2X_4 (X = S, Se, Te) Chalcopyrite Semiconductor

We observe significant effects of structural distortion on electronic and optical properties of CdGa_2X_4 (X = S, Se, Te) defect chalcopyrite. The calculation is carried out within Density functional theory based tight binding linear muffin tin orbital (TB-LMTO) method. Structural parameters and band gap of CdGa_2X_4 agree well with the available experimental values within LDA limit. Change in band gap due to structural distortion is 3.63%, 4.0%, and 8.8% respectively. We observe significant change in optical properties also due to this effect. Effects on optical properties come mainly from optical matrix elements. Our results of these response functions agree well with the available experimental values.

preprint2011arXiv

Effect of structural distortion and nature of bonding on the electronic properties of defect and Li doped CulnSe2Chalcopyrite Semiconductors

We report the structural and electronic properties of chalcopyrite semiconductors CuInSe2, CuIn2 Se4 and Cu0.5Li0.5InSe2. Our calculation is based on Density functional Theory within tight binding linear muffin-tin orbital (TB-LMTO) method. The calculated lattice constants, anion displacement (u), tetragonal distortion (η = c/2a) and bond lengths agree well with experimental values. Our result shows these compounds are direct band gap semiconductors. Our calculated band gaps, 0.79eV and 1.08 eV of CuInSe2 and Cu0.5Li0.5InSe2 respectively agree well with the experimental values within the limitation of LDA. The band gap of CuIn2Se4 is found to be 1.50 eV. The band gap reduces by 59.57%, 23.61% and 48.82% due to p-d hybridization and reduces by 16.85%, 9.10% and 0.92% due to structural distortion for CuInSe2, CuIn2Se4 and Cu0.5Li0.5InSe2 respectively. We also discuss the effect of bond nature on electronic properties of all three compounds.