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Sun-Woo Kim

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Published work

8 published item(s)

preprint2021arXiv

Circular dichroism of emergent chiral stacking orders in quasi-one-dimensional charge density waves

Chirality-driven optical properties in charge density waves are of fundamental and practical importance. Here, we investigate the interaction between circularly polarized light and emergent chiral stacking orders in quasi-one-dimensional (quasi-1D) charge-density waves (CDW) with density-functional theory calculations. In our specific system, self-assembled In nanowires on Si(111) surface, spontaneous mirror symmetry breaking leads to symmetrically distinct four degenerate quasi-1D CDW structures, which exhibit geometrical chirality. Such geometrical chirality may naturally induce optically active phenomena even when the quasi-1D CDW structures are stacked perpendicular to the CDW chain direction. Indeed, we find that left- and right-chiral stacking orders show distinct circular dichroism responses while a nonchiral stacking order does no circular dichroism. Such optical responses are attributed to the existence of glide mirror symmetry of the CDW stacking orders. Our findings suggest that the CDW chiral stacking orders can lead to diverse active optical phenomena such as chirality-dependent circular dichroism, which can be observed in scanning tunneling luminescence measurements with circularly polarized light.

preprint2021arXiv

Low-energy electrodynamics of Dirac semimetal phases in the doped Mott insulator Sr$_2$IrO$_4$

Correlated Dirac semimetal phases emerge in lightly doped (Tb- or La-doped) Mott insulator Sr$_2$IrO$_4$, where a d-wave symmetry-breaking order underlying a pseudogap plays a crucial role in determining the nature of Dirac degeneracy, i.e., whether it is a Dirac line node or Dirac point node. Here, using a realistic five-orbital tight-binding model with a Hubbard U and a semiclassical Boltzmann transport theory, we systematically study the low-energy electrodynamic properties of the Dirac semimetal phases in the paramagnetic lightly doped Sr$_2$IrO$_4$. We investigate the effects of the d-wave electronic order and electron doping concentration on the electronic band structures and optical properties of various Dirac semimetal phases. We calculate the intraband optical conductivity and obtain electrodynamic parameters of dc conductivity, scattering rate, and Drude weight for three Dirac semimetal phases: two are Dirac point-node states observed in the 3% Tb-doped and 5% La-doped Sr$_2$IrO$_4$, and the other is a Dirac line-node state. Our results show that the temperature dependence of the electrodynamic parameters is strong in the Tb-doped system while weak in the La-doped and Dirac line-node systems, which are consistent with available experimental data. Moreover, using the low-energy effective theory, we also compare the temperature-dependent screening effect in the Tb- and La-doped systems using graphene as a reference. Our paper provides valuable insight for understanding the transport and optical properties of correlated Dirac semimetal phases in the doped Sr$_2$IrO$_4$.

preprint2020arXiv

Nonsymmorphic Dirac semimetal and carrier dynamics in doped spin-orbit-coupled Mott insulator Sr$_2$IrO$_4$

A Dirac fermion emerges as a result of interplay between symmetry and topology in condensed matter. Current research moves towards investigating the Dirac fermions in the presence of manybody effects in correlated system. Here, we demonstrate the emergence of correlation-induced symmetry-protected Dirac semimetal state in the lightly-doped spin-orbit-coupled Mott insulator Sr$_2$IrO$_4$. We find that the nonsymmorphic crystalline symmetry stabilizes a Dirac line-node semimetal and that the correlation-induced symmetry-breaking electronic order further leads to a phase transition from the Dirac line-node to a Dirac point-node semimetal. The latter state is experimentally confirmed by angle-resolved photoemission spectroscopy and terahertz spectroscopy on Sr$_2$(Ir,Tb)O$_4$ and (Sr,La)$_2$IrO$_4$. Remarkably, the electrodynamics of the massless Dirac carriers is governed by the extremely small scattering rate of about 6 cm$^{-1}$ even at room temperature, which is iconic behavior of relativistic quasiparticles. Temperature-dependent changes in electrodynamic parameters are also consistently explained based on the Dirac point-node semimetal state.

preprint2016arXiv

Origin of the Metal-Insulator Transition of Indium Atom Wires on Si(111)

As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to electron-phonon coupling. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4x1 phase to the low-temperature 8x2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the x2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls instability-driven CDW formation.

preprint2015arXiv

Contrasting interedge superexchange interactions of graphene nanoribbons embedded in h-BN and graphane

Based on first-principles density-functional theory calculations, we present a comparative study of the elec- tronic structures of ultranarrow zigzag graphene nanoribbons (ZGNRs) embedded in hexagonal boron nitride (BN) sheet and fully hydrogenated graphene (graphane) as a function of their width N (the number of zigzag C chains composing the ZGNRs). We find that ZGNRs/BN have the nonmagnetic ground state except at N = 5 and 6 with a weakly stabilized half-semimetallic state, whereas ZGNRs/graphane with N >= 2 exhibit a strong antiferromagnetic coupling between ferromagnetically ordered edge states on each edge. It is revealed that the disparate magnetic properties of the two classes of ZGNRs are attributed to the contrasting interedge superexchange interactions arising from different interface structures: i.e., the asymmetric interface structure of ZGNRs/BN gives a relatively short-range and weak superexchange interaction between the two inequivalent edge states, while the symmetric interface structure of ZGNRs/graphane gives a long-range, strong interedge superexchange interaction.

preprint2015arXiv

Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4x1 structure is only slightly compressive, while that of the low-temperature insulating 8x2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications in understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.

preprint2015arXiv

Nature of the Insulating Ground State of the 5d PostPerovskite CaIrO3

The insulating ground state of the 5d transition metal oxide CaIrO3 has been classified as a Mott-type insulator. Based on a systematic density functional theory (DFT) study with local, semilocal, and hybrid exchange-correlation functionals, we reveal that the Ir t2g states exhibit large splittings and one-dimensional electronic states along the c axis due to a tetragonal crystal field. Our hybrid DFT calculation adequately describes the antiferromagnetic (AFM) order along the c direction via a superexchange interaction between Ir4+ spins. Furthermore, the spin-orbit coupling (SOC) hybridizes the t2g states to open an insulating gap. These results indicate that CaIrO3 can be represented as a spin-orbit Slater insulator, driven by the interplay between a long-range AFM order and the SOC. Such a Slater mechanism for the gap formation is also demonstrated by the DFT + dynamical mean field theory calculation, where the metal-insulator transition and the paramagnetic to AFM phase transition are concomitant with each other.

preprint2013arXiv

Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface

Using first-principles density-functional calculations, we explore the possibility of magnetic order at the rebonded $D_B$ step of the Si(001) surface. The rebonded $D_B$ step containing threefold coordinated Si atoms can be treated as a one-dimensional dangling-bond (DB) wire along the step edge. We find that Si atoms composing the step edge are displaced up and down alternatively due to Jahn-Teller-like distortion, but, if Si dimers on the terrace are passivated by H atoms, the antiferromagnetic (AFM) order can be stabilized at the step edge with a suppression of Jahn-Teller-like distortion. We also find that the energy preference of AFM order over Jahn-Teller-like distortion is enhanced in an oscillatory way as the length of DB wires decreases, showing the so-called quantum size effects.