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Sugata Mukherjee

Sugata Mukherjee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Strain induced large enhancement of thermoelectric figure-of-merit ($ZT\sim 2$) in transition metal dichalcogenide monolayers ZrX$_2$ (X= S, Se, Te)

Two-dimensional group IV transition-metal dichalcogenides have encouraging thermoelectric applications since their electronic and lattice properties can be manipulated with strain. In this paper, we report the thermoelectric parameters such as electrical conductivity, Seebeck coefficients, electrical relaxation times, and the mode dependent contributions to the lattice thermal conductivity of ZrX$_2$ (X = S, Se, Te) from first principles methods. Our calculations indicate that due to tensile strain, the powerfactor increases while simultaneously decreasing the lattice thermal conductivity thus enhancing the thermoelectric figure of merit. Tensile strain widens the bandgap which corresponds to higher powerfactor. The lattice thermal conductivity decreases due to the stiffening of the out-of-plane phonon modes thus reducing the anharmonic scattering lifetimes and increasing the thermoelectric figure-of-merit.

preprint2016arXiv

Electronic Structure, Phase Stability and Resistivity of Hybrid Hexagonal C$_x$(BN)$_{1-x}$ Two-dimensional Nanomaterial: A First-principles Study

We use density functional theory based first-principles method to investigate the bandstructure and phase stability in the laterally grown hexagonal C$_x$(BN)$_{1-x}$, two-dimensional Graphene and $h$-BN hybrid nanomaterials, which were synthesized by experimental groups recently (Liu $et al$, Nature Nanotech, 8, 119 (2013)). Our detail electronic structure calculations on such materials, with both armchair and zigzag interfaces between the Graphene and $ h$-BN domains, indicate that the band-gap decreases non-monotonically with the concentration of Carbon. The calculated bandstructure shows the onset of Dirac cone like features near the band-gap at high Carbon concentration ($x \sim 0.8$). From the calculated energy of formation, the phase stability of C$_x$(BN)$_{1-x}$ was studied using a regular solution model and the system was found to be in the ordered phase below a few thousand Kelvin. Furthermore, using the Boltzmann transport theory we calculate the electrical resistivity from the bandstrcture of C$_x$(BN)$_{1-x}$ at different temperature ($T$), which shows a linear behaviour when plotted in the logarithmic scale against $T^{-1}$, as observed experimentally

preprint2016arXiv

Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study

We present first principles study of thermoelectric transport properties of sandwiched heterostructure of Graphene (G)/hexagonal Boron Nitride (BN)/G, based on Boltzmann transport theory for band electrons using the bandstructure calculated from the Density Functional Theory (DFT) based plane-wave method. Calculations were carried out for three, four and five BN layers sandwiched between Graphene layers with three different arrangements to obtain the Seebeck coefficient and Power factor in $T\sim 25-400$K range. Moreover, using Molecular Dynamics (MD) simulations with very large simulation cell we obtained the thermal conductance ($K$) of these heterostructures and obtained finally the Figure-of-Merit ($ZT$). These results are in agreement with recently reported experimental measurements.

preprint2012arXiv

Electronic Properties of Boron and Nitrogen doped graphene: A first principles study

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K-point. On the other hand, by B (hole doping), the Dirac point shifts above the Fermi level and a gap appears. Upon co-doping of graphene by B and N, the energy gap between valence and conduction bands appears at Fermi level and the system behaves as narrow gap semiconductor. Obtained results are found to be in well agreement with available experimental findings.

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