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Researcher profile

T. P. Kaloni

T. P. Kaloni contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

18 published item(s)

preprint2016arXiv

Band gap modulation in polythiophene and polypyrrole-based systems

In this paper, the structural and electronic properties of polythiophene and polyprrrole-based systems have been investigated using first-principles calculations both in periodic and oligomer forms. Of particular interest is the band gap modulation through substitutions and bilayer formation. Specifically, S has been substituted by Se and Te in polythiophene, leading to polyseleophene and polytellurophene, respectively, and N has been substituted by P and As in polypyrrole. The values obtained of the binding energy suggest that all the systems studied can be realized experimentally. Stacking (bilayer formation) of pure polythiophene, polypyrrole and their derivatives leads to linear suppression of the band gap or HOMO-LUMO gap as a function of the stacking. Mixed bilayers, including one formed from polythiophene on top of polypyrrole, have also been considered. Overall, a wide range of band gaps can be achieved through substitutions and stacking. Hybrid (B3LYP) calculations also suggest the same trend in the band gap as PBE calculations. Trends in the binding energy are similar for both periodic and molecular calculations. In addition, the $Γ$-point phonon calculation are performed in order to check the stability of selected systems.

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preprint2016arXiv

Topological phase in oxidized zigzag stanene nanoribbons

First-principles and semi-empirical tight binding calculations were performed to understand the adsorption of oxygen on the surface of two dimensional (2D) and zigzag stanene nano-ribbons. The intrinsic spin-orbit interaction is considered in the Kane-Mele tight binding model. The adsorption of an oxygen atom or molecule on the 2D stanene opens an electronic energy band gap. We investigate the helical edge states and topological phase in the pure zigzag stanene nano-ribbons. The adsorption of oxygen atoms on the zigzag stanene nano-ribbons deforms the helical edge states at the Fermi level which causes topological (non-trivial) to trivial phase transition. The structural stability of the systems is checked by performing $Γ$-point phonon calculations. The adsorption of an oxygen atom or molecule on the 2D staneneSpecific arrangements of adsorbed oxygen atoms on the surface of zigzag stanene nano-ribbons conserve the topological phase which has potential applications in future nano-electronic devices.

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preprint2015arXiv

The Structural and Electronic Properties of Pristine and Doped Polythiophene: Periodic Versus Molecular Calculations

Based on density functional theory calculations, the structural and electronic properties of polythiophene in periodic and oligomer forms have been investigated. In particular, the effects of Li or Cl adsorption onto a monolayer and Li or Cl-intercalation into bulk or bilayer polythiophene are addressed using periodic calculations. The binding energy of Li or Cl adsorbed bulk or bilayer polythiophene is significantly larger than for the monolayer. The trends in the binding energy as a function of adsorbent remain the same for both the periodic and molecular cases. The band gap or HOMO-LUMO gap and charge transfer are analysed. In addition, for the bulk or bilayer, different kinds of stacking have been considered. It is found that the parallel bulk or bilayer structure is energetically favorable compared to flipping the second layer by 180$^\circ$. This has been considered for both the periodic and oligomer forms. Moreover, for Li adsorption, polarons are found to be more stable than bipolarons, while the situation is opposite for Cl adsorption. The detailed analysis of the present study will be useful for understanding the structural properties and the tuneability of the electronic states, which is an important step to construct polythiophene based electronic devices.

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preprint2014arXiv

Band gap tunning in BN-doped graphene systems with high carrier mobility

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers.

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preprint2014arXiv

Prediction of a quantum anomalous Hall state in Co decorated silicene

Based on first-principles calculations, we demonstrate that Co decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin orbit coupling of the silicene opens a nontrivial band gap at the K-point. As compared to other transition metals, Co decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.

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preprint2014arXiv

Quantum spin Hall states in graphene interacting with WS$_2$ or WSe$_2$

In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field.

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preprint2014arXiv

Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3$d$ Transition Metal Atoms

The structural, electronic, and magnetic properties of 3$d$ transition metal (TM) atoms (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) adsorbed germanene are addressed using density functional theory. Based on the adsorption energy, TM atoms prefer to occupy at the hollow site for all the cases. The obtained values of the total magnetic moment vary from 0.97 $μ_B$ to 4.95 $μ_B$ in case of Sc to Mn-adsorption, respectively. A gap of 74 meV with a strongly enhanced splitting of 67 meV is obtained in case of Sc-adsorption, whereas metallic states are obtained in case of Ti, Cr, Mn, Fe, and Co. Non-magnetic states are realized for Ni, Cu, and Zn-adsorption. Moreover, semiconducting nature is obtained for non-magnetic cases with a gap of 26 to 28 meV. Importantly, it is found that V-adsorbed germanene can host the quantum anomalous Hall effect. The obtained results demonstrate that TM atoms and nearest neighbour Ge atoms are ferro-magnetically ordered in the cases of V, Mn, Fe, Co, Ni, Cu, and Zn, while anti-ferromagnetic ordering is obtained for Sc, Ti, and Cr. In addition, the effects of the coverage of all TM atoms on the electronic structure and the ferro-magnetic and anti-ferro-magnetic coupling in case of Mn are examined. The results could help to understand the effect of TM atoms in a new class of two-dimensional materials beyond graphene and silicene.

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preprint2014arXiv

Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using $ab$-$initio$ calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic structure of germanene on GaAs(0001) substrate and found to be the Dirac cone shift above the Fermi level with the spltting of 160 meV. Forthermore, we calculate the band structure of the free standing germanene with and without substrate and found band gap of 24 meV due to the intrinsic spin orbit coupling.

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preprint2013arXiv

A first principles investigated optical spectra of oxizided graphene

The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical spectra of the various defects for energies up to 3 eV. This makes it possible to quantify by optical spectroscopy the ratios of the defect species present in a sample.

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preprint2013arXiv

Electronic properties of Mn decorated silicene on hexagonal boron nitride

We study silicene on hexagonal boron nitride, using first principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

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preprint2013arXiv

Hole doped Dirac states in silicene by biaxial tensile strain

The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doping because of weakening of the Si$-$Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.

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preprint2013arXiv

Modelling magnetism of C at O and B monovacancies in graphene

The presence of defects can introduce important changes in the electronic structure of graphene, leading to phenomena such as C magnetism. In addition, vacancies are reactive and permit the incorporation of dopants. This paper discusses the electronic properties of defective graphene for O and B decoration. Phonon calculations allow us to address directly the stability of the systems under study. We show that it is possible to obtain magnetic solutions with and without dangling bonds, demonstrating that C magnetism can be achieved in the presence of B and O.

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preprint2013arXiv

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved, which has not been possible in any other system so far. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a metal to a topological insulator and further to a band insulator.

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preprint2013arXiv

Stability of germanene under tensile strain

The stability of germanene under biaxial tensile strain and the accompanying modifications of the electronic properties are studied by density functional theory. The phonon spectrum shows that up to $16\%$ strain the germanene lattice is stable, where the Dirac cone shifts towards higher energy and hole-doped Dirac states are achieved. The latter is due to weakening of the Ge-Ge bonds and reduction of the s-p hybridization. Our calculated Grüneisen parameter shows a similar dependence on the strain as reported for silicene (which is different from that of graphene).

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preprint2013arXiv

Substrate enhanced superconductivity in Li-decorated graphene

We investigate the role of the substrate for the strength of the electon phonon coupling in Li-decorated graphene. We find that the interaction with a $h$-BN substrate leads to a significant enhancement from $λ_0=0.62$ to $λ_1=0.67$, which corresponds to a $25\%$ increase of the transition temperature from $T_{c0}=10.33$ K to $T_{c1}=12.98$ K. The superconducting gaps amount to 1.56 meV (suspended) and 1.98 meV (supported). These findings open up a new route to enhanced superconducting transition temperatures in graphene-based materials by substrate engineering.

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preprint2012arXiv

Electronic Properties of Boron and Nitrogen doped graphene: A first principles study

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K-point. On the other hand, by B (hole doping), the Dirac point shifts above the Fermi level and a gap appears. Upon co-doping of graphene by B and N, the energy gap between valence and conduction bands appears at Fermi level and the system behaves as narrow gap semiconductor. Obtained results are found to be in well agreement with available experimental findings.

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preprint2012arXiv

Induced magnetism in transition metal intercalated graphitic systems

We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density functional theory, we find induced spin-polarization of the C atoms both when the graphene sheets are aba stacked (forming graphite) and aaa stacked (resembling bi-layer graphene). The magnetic moment induced by Mn, Fe, and Co turns out to vary from 1.38 μB to 4.10 μB, whereas intercalation of Ni and Cu does not lead to a magnetic state. The selective induction of spin-polarization can be utilized in spintronic and nanoelectronic applications.

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