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Subin Lee

Subin Lee contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

The origin of jerky dislocation motion in high-entropy alloys

Dislocations in single-phase concentrated random alloys, including high- entropy alloys (HEAs), repeatedly encounter pinning during glide, resulting in jerky dislocation motion. While solute-dislocation interaction is well understood in conventional alloys, the origin of individual pinning points in concentrated random alloys is a matter of debate. In this work, we investigate the origin of dislocation pinning in the CoCrFeMnNi HEA. In- situ transmission electron microscopy studies reveal wavy dislocation lines and a jagged glide motion under external loading, even though no segregation or clustering is found around Shockley partial dislocations. Atomistic simulations reproduce the jerky dislocation motion and link the repeated pinning to local fluctuations in the Peierls friction. We demonstrate that the density of high local Peierls friction is proportional to the critical stress required for dislocation glide and the dislocation mobility.

preprint2021arXiv

Nanocrystalline equiatomic CoCrFeNi alloy thin films: Are they single phase fcc?

The bulk quaternary equiatomic CoCrFeNi alloy is studied extensively in literature. Under experimental conditions, it shows a single-phase fcc structure and its physical and mechanical properties are similar to those of the quinary equiatomic CoCrFeMnNi alloy. Many studies in literature have focused on the mechanical properties of bulk nanocrystalline high entropy alloys or compositionally complex alloys, and their microstructure evolution upon annealing. The thin film processing route offers an excellent alternative to form nanocrystalline alloys. Due to the high nucleation rate and high density of defects in thin films synthesized by sputtering, the kinetics of microstructure evolution is often accelerated compared to those taking place in the bulk. Here, thin films are used to study the phase evolution in nanocrystalline CoCrFeNi deposited on Si/SiO 2 and c-sapphire substrates by magnetron cosputtering from elemental sources. The phases and microstructure of the films are discussed in comparison to the bulk alloy. The main conclusion is that second phases can form even at room temperature provided there are sufficient nucleation sites.

preprint2021arXiv

Structure and hardness of in situ synthesized nano-oxide strengthened CoCrFeNi high entropy alloy thin films

In this study, we report on face-centered cubic structured CoCrFeNi high-entropy alloy thin films with finely dispersed nano-oxide particles which are formed by internal oxidation. Analytical scanning transmission electron microscopy imaging found that the particles are Cr2O3. The oxide particles contribute to the hardening of the film increasing its hardness by 14% compared to that of the film without precipitates, through the Orowan-type strengthening mechanism. Our novel approach paves the way to design medium- and high-entropy alloys with high strength by making use of oxide phases.

preprint2021arXiv

Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure

Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct atomic arrangement compared to the grain interior. While the GB structure has a crucial influence on the electrical properties, its relationship with resistivity is poorly understood. Here, we perform a systematic study on the resistivity and structure relationship in Cu tilt GBs, employing high resolution in-situ electrical measurements coupled with atomic structure analysis of the GBs. Excess volume and energies of selected GBs are calculated using molecular dynamics simulations. We find a consistent relation between the coincidence site lattice (CSL) type of the GB and its resistivity. The most resistive GBs are high range of low-angle GBs (misorientation 14 to 18 degrees) with twice the resistivity of high angle tilt GBs, due to the high dislocation density and corresponding strain fields. Regarding the atomistic structure, GB resistivity approximately correlates with the GB excess volume. Moreover, we show that GB curvature increases resistivity by about 80%, while phase variations and defects within the same CSL type do not considerably change it.

preprint2020arXiv

Comparative study of hydrogen embrittlement resistance between additively and conventionally manufactured austenitic stainless steels

Hydrogen embrittlement in 304L (18wt.% Cr, 8-10wt.% Ni) austenitic stainless steel (ASS) fabricated by laser powder-bed-fusion (LPBF) was investigated by tensile testing after electrochemical hydrogen pre-charging and compared to conventionally available 304L ASSs with two different processing histories, (i) casting plus annealing (CA) and (ii) CA plus thermomechanical treatment (TMT). It was revealed that hydrogen-charging led to a significant reduction in ductility for the CA sample, but only a small effect of hydrogen was observed for the LPBF and CA-TMT samples. Hydrogen-assisted cracking behavior was found to be strongly linked to strain-induced martensitic transformation. In addition, the amount of alpha' martensite was much higher in the CA sample than in other samples, suggesting that severe hydrogen embrittlement can be correlated with the low mechanical stability of austenite. Detailed microstructural characterization showed that low austenite stability of the CA sample was mainly attributed to the retained content of delta ferrite and the chemical inhomogeneity inside the gamma matrix (gamma close to delta has ~2 wt.% higher Cr but ~2 wt.% lower Ni), but TMT enhanced the chemical homogeneity and thus austenite stability. By contrast, the LPBF process led directly, i.e. without any thermomechanical treatment, to a fully austenitic structure with homogeneous elemental distribution in the ASS. These results confirmed that the presence of delta and the chemical inhomogeneity inside gamma matrix, which promoted the deformation-induced martensitic transformation and the associated H enrichment at the gamma-alpha' interface, was the primary reason for the severe H-assisted failure.