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Steven A. Ringel

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cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

The performance of ultra-wide band gap materials like $β$ -Ga $_\mathrm{2}$ O $_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO $_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L $_\mathrm{gd}$ ) of 6 um and 0.6 um respectively in $β$ -Ga $_\mathrm{2}$ O $_\mathrm{3}$ , at a high channel sheet charge density of 1.8x10 $^\mathrm{13}$ cm $^\mathrm{-2}$ . The high sheet charge density together with high breakdown field enabled a record power figure of merit (V $^\mathrm{2}$ $_\mathrm{br}$ /R $_\mathrm{on}$ ) of 376 MW/cm $^\mathrm{2}$ at a gate-drain spacing of 3 um.

preprint2020arXiv

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

A new record-high room temperature electron Hall mobility ( $μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$ ) for $β$ -Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$ -Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties.

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Steven A. Ringel

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2 publications

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

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Steven A. Ringel

Research overview

Is this your work?

2 publications

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) βββ-Ga2_{2}2​O3_{3}3​

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Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$