Researcher profile

Stephen R. McMillan

Stephen R. McMillan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Resonant single-shot CNOT in remote double quantum dot spin qubits

A critical element towards the realization of scalable quantum processors is non-local coupling between nodes. Scaling connectivity beyond nearest-neighbor interactions requires the implementation of a mediating interaction often termed a 'quantum bus'. Cavity photons have long been used as a bus by the superconducting qubit community, but it has only recently been demonstrated that spin-based qubits in double quantum dot architectures can reach the strong coupling regime and exhibit spin-spin interactions via the exchange of real or virtual photons. Two-qubit gate operations are predicted in the dispersive regime where cavity loss plays a less prominent role. In this work we propose a framework for ac-driven quantum gates, in the context of a CNOT operation, between two non-local single-spin qubits dispersively coupled to a common mode of a superconducting resonator. We expect gate times near 150 ns and fidelities above 90% with existing technology.

preprint2021arXiv

Theory of spin-polarized current flow through a localized spin triplet state

We derive a formalism describing quantum-coherent features of spin-polarized charge current through a partially-polarized spin triplet defect in a $\textit{transverse}$ magnetic field. We predict distinct few-milli-tesla-dc magnetoresistance signatures that identify a $\textit{single}$ spin-triplet center's character and reveal the orientation of the spin triplet's zero-field splitting axis relative to the magnetic contact's polarization. For example, in 4H-SiC the single $(hh)$, $(kk)$, $(hk)$, and $(kh)$ divacancies are all distinct. Spin-polarized current flow efficiently polarizes the spin, potentially electrically initializing spin-triplet-based qubits.

preprint2020arXiv

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

We report scanning tunneling microscopy studies of individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100x. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

preprint2019arXiv

Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant

We predict strong, dynamical effects in the dc magnetoresistance of current flowing from a spin-polarized electrical contact through a magnetic dopant in a nonmagnetic host. Using the stochastic Liouville formalism we calculate clearly-defined resonances in the dc magnetoresistance when the applied magnetic field matches the exchange interaction with a nearby spin. At these resonances spin precession in the applied magnetic field is canceled by spin evolution in the exchange field, preserving a dynamic bottleneck for spin transport through the dopant. Similar features emerge when the dopant spin is coupled to nearby nuclei through the hyperfine interaction. These features provide a precise means of measuring exchange or hyperfine couplings between localized spins near a surface using spin-polarized scanning tunneling microscopy, without any ac electric or magnetic fields, even when the exchange or hyperfine energy is orders of magnitude smaller than the thermal energy.