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Researcher profile

Stephen McDonnell

Stephen McDonnell contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2019arXiv

MoS2 Impurities: Chemical Identification and Spatial Resolution of Bismuth Impurities in Geological Material

Molybdenum disulfide (MoS2) is the most widely studied transition metal dichalcogenide (TMDC) material, in part because it is a natural crystal present in the earth, thus making it abundant and easily accessible. Geological MoS2 has been used in various studies that look at incorporating MoS2 into devices for nanoelectronics and optoelectronics. However, variations in the electronic properties of a single MoS2 surface are known to exist due to defects that are intrinsic to natural MoS2. This work reports the presence of bismuth impurities in MoS2 with concentrations high enough to be detected by X-ray photoelectron spectroscopy (XPS). These concentrations are further corroborated with inductively coupled plasma optical emission spectroscopy (ICP-OES). Localization of these bismuth clusters is shown using XPS-mapping, and the cluster size is determined to be on the order of tens of microns. This work provides important insights into the nature of impurities that are known to exist in MoS2.

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preprint2014arXiv

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures.

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preprint2014arXiv

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

0 citations0 reviewsNo code linkedOpen access