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Researcher profile

Stephen J. Pennycook

Stephen J. Pennycook contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallphysics.app-ph

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Published work

10 published item(s)

preprint2022arXiv

Ordered and tunable Majorana-zero-mode lattice in naturally strained LiFeAs

Majorana zero modes (MZMs) obey non-Abelian statistics and are considered building blocks for constructing topological qubits. Iron-based superconductors with topological band structures have emerged as promising hosting materials, since isolated candidate MZMs in the quantum limit have been observed inside the topological vortex cores. However, these materials suffer from issues related to alloying-induced disorder, uncontrolled vortex lattices and a low yield of topological vortices. Here, we report the formation of an ordered and tunable MZM lattice in naturally-strained stoichiometric LiFeAs by scanning tunneling microscopy/spectroscopy (STM/S). We observe biaxial charge density wave (CDW) stripes along the Fe-Fe and As-As directions in the strained regions. The vortices are pinned on the CDW stripes in the As-As direction and form an ordered lattice. We detect more than 90 percent of the vortices to be topological and possess the characteristics of isolated MZMs at the vortex center, forming an ordered MZM lattice with the density and the geometry tunable by an external magnetic field. Remarkably, with decreasing the spacing of neighboring vortices, the MZMs start to couple with each other. Our findings provide a new pathway towards tunable and ordered MZM lattices as a platform for future topological quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unlocking the Origin of Compositional Fluctuations in InGaN Light Emitting Diodes

The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistical distribution of the compositional fluctuations in $In_{x}Ga_{1-x}N$ quantum wells (QWs). Employing a multiscale computational model, we show the tendency of intrinsic compositional fluctuation in $In_{x}Ga_{1-x}N$ QWs at different Indium concentration and in the presence of strain. We have developed a systematic formalism based on the autonomous detection of compositional fluctuation in observed and simulated EELS maps. We have shown a direct comparison between the computationally predicted and experimentally observed compositional fluctuations. We have found that although a random alloy model captures the distribution of compositional fluctuations in relatively low In ($\sim$ 18%) content $In_{x}Ga_{1-x}N$ QWs, there exists a striking deviation from the model in higher In content ($\geq$ 24%) QWs. Our results highlight a distinct behavior in carrier localization driven by compositional fluctuations in the low and high In-content InGaN QWs, which would ultimately affect the performance of LEDs. Furthermore, our robust computational and atomic characterization method can be widely applied to study materials in which nanoscale compositional fluctuations play a significant role on the material performance.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the Meta-Stability of Oxide Core/Shell Nanoparticle Systems at Atomic Resolution

Hybrid nanoparticles allow exploiting the interplay of confinement, proximity between different materials and interfacial effects. However, to harness their properties an in-depth understanding of their (meta)stability and interfacial characteristics is crucial. This is especially the case of nanosystems based on functional oxides working under reducing conditions, which may severely impact their properties. In this work, the in-situ electron-induced selective reduction of Mn3O4 to MnO is studied in magnetic Fe3O4/Mn3O4 and Mn3O4/Fe3O4 core/shell nanoparticles by means of high-resolution scanning transmission electron microscopy combined with electron energy-loss spectroscopy. Such in-situ transformation allows mimicking the actual processes in operando environments. A multi-stage image analysis using geometric phase analysis combined with particle image velocity enables direct monitoring of the relationship between structure, chemical composition and strain relaxation during the Mn3O4 reduction. In the case of Fe3O4/Mn3O4 core/shell the transformation occurs smoothly without the formation of defects. However, for the inverse Mn3O4/Fe3O4 core/shell configuration the electron beam-induced transformation occurs in different stages that include redox reactions and void formation followed by strain field relaxation via formation of defects. This study highlights the relevance of understanding the local dynamics responsible for changes in the particle composition in order to control stability and, ultimately, macroscopic functionality.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Phase-controllable growth of ultrathin 2D magnetic FeTe crystals

Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Competition between covalent bonding and charge transfer at complex-oxide interfaces

Here we study the electronic properties of cuprate/manganite interfaces. By means of atomic resolution electron microscopy and spectroscopy, we produce a subnanometer scale map of the transition metal oxidation state profile across the interface between the high $T_c$ superconductor YBa$_2$Cu$_3$O$_{7-δ}$ and the colossal magnetoresistance compound (La,Ca)MnO$_3$. A net transfer of electrons from manganite to cuprate with a peculiar non-monotonic charge profile is observed. Model calculations rationalize the profile in terms of the competition between standard charge transfer tendencies (due to band mismatch), strong chemical bonding effects across the interface, and Cu substitution into the Mn lattice, with different characteristic length scales.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

p-type doping in CVD grown MoS2 using Nb

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evolution of the nuclear and magnetic structures of TlFe1.6Se2 with temperature

The evolution of the nuclear and magnetic structures of TlFe$_{1.6}$Se$_2$ was determined in the temperature range of 5-450\,K using single crystal neutron diffraction. The Fe layers in these materials develop a corrugation in the magnetically ordered state. A canting away from the block checkerboard magnetic structure is observed in the narrow temperature range between approximately 100 and 150\,K. In this same temperature range, an increase in the corrugation of the Fe layers is observed. At lower temperatures, the block checkerboard magnetic structure is recovered with a suppressed magnetic moment and abrupt changes in the lattice parameters. Microstructure analysis at 300\,K using atomic-resolution Z-contrast scanning transmission electron microscopy reveals regions with ordered and disordered Fe vacancies, and the iron content is found to be uniform across the crystal. These findings highlight the differences between the alkali-metal and thallium materials, and indicate competition between magnetic ground states and a strong coupling of magnetism to the lattice in TlFe$_{1.6}$Se$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Watching Domains Grow: In-situ studies of polarization switching by combined Scanning Probe and Scanning Transmission Electron Microscopy

Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71^{\circ} domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls is observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in-situ spatially-resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Control of the structural and magnetic properties of perovskite oxide ultrathin films through the substrate symmetry effect

Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interface properties driven by symmetry alone. Depending on the resistance of the octahedra to deformation, the interface layer can be as small as one unit cell or extend deep into the thin film.

0 citations0 reviewsNo code linkedOpen access