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Source author record

Stefano Ossicini

Stefano Ossicini appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.chem-phphysics.optics

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Published work

12 published item(s)

preprint2022arXiv

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the near-band-edge states localization, as well as the band-offset properties between Si and Ge regions, are investigated in detail. On the one hand, we prove that Si(core)/Ge(shell) nanocrystals always show a type II band-offset alignment, with the HOMO mainly localized on the Ge shell region and the LUMO mainly localized on the Si core region. On the other hand, our results point out that a type II offset cannot be observed in small (diameter less than 3 nm) Ge(core)/Si(shell) nanocrystals. In these systems, quantum confinement and strain drive the near-band-edge states to be mainly localized on Ge atoms inducing a type I alignment. In larger Ge(core)/Si(shell) nanocrystals, instead, the formation of a type II offset can be engineered by playing with both core and shell thickness. The conditions that favor the transition from a type I to a type II alignment for Ge(core)/Si(shell) nanocrystals are discussed in detail.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Energetics and carrier transport in doped Si/SiO2 quantum dots

In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5\,nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Preferential positioning of dopants and co-dopants in embedded and freestanding Si nanocrystals

In this work we aim at understanding the effect of n-type and p-type substitutional doping in the case of matrix-embedded and freestanding Si nanocrystals. By means of ab-initio calculations we identify the preferential positioning of the dopants and its effect on the structural properties with respect to the undoped case. Subsequently, we consider the case of phosphorus and boron co-doped nanocrystals showing that, against the single-doping situation, the energetics strongly favors the binding of the impurities at the NC surface. Indeed we demonstrate that the polar B-P bond forms a stable permanent electric dipole that radially points inwards the nanocrystal. Such noteworthy characteristic and its physical consequences are discussed alongside new potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics

Being a source of clean and renewable energy, the possibility to convert solar radiation in electric current with high efficiency is one of the most important topics of modern scientific research. Currently the exploitation of interaction between nanocrystals seems to be a promising route to foster the establishment of third generation photovoltaics. Here we adopt a fully ab-initio scheme to estimate the role of nanoparticle interplay on the carrier multiplication dynamics of interacting silicon nanocrystals. Energy and charge transfer-based carrier multiplication events are studied as a function of nanocrystal separation showing benefits induced by the wavefunction sharing regime. We prove the relevance of these recombinative mechanisms for photovoltaic applications in the case of silicon nanocrystals arranged in dense arrays, quantifying at an atomistic scale which conditions maximize the outcome.

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preprint2013arXiv

Optical absorption and emission of silicon nanocrystals: From single to collective response

We report on the possibility of describing the absorption and emission characteristics of an ensemble of silicon nanocrystals (NCs) with realistic distributions in the NC size, by the sum of the reponses of the single NCs. The individual NC responses are evaluated by means of ab-initio theoretical calculations and the summation is performed by taking into account the trend of the optical properties as a function of NC size and oxidation degree. The comparison with experimental results shows a nice matching of the spectra, also without any tuning of the parameters. Finally, the possibility of adapting the model in order to reproduce the experimental data is explored and discussed.

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preprint2013arXiv

Role of strain in interacting silicon nanoclusters

The possibility of controlling the optical transition probability between neighbouring silicon nanoclusters (Si-NCs) constitutes nowadays an attractive prospect in nanophotonics and photovoltaics. In this work, by means of theoretical ab-initio calculations we investigate the effect of strain on the opto-electronic properties of Si-NCs pairs. We consider two sources of strain: the strain induced by an embedding SiO2 matrix, and the strain generated by mutual NC-NC forces occurring at small distances. Independently on its source, we observe a fundamental impact of the strain on the orbitals localization and, as a consequence, on the transition probability between energy states, belonging or not to the same NC. The resulting picture allots to the structural strain a fundamental role in the NC-NC interaction mechanisms, suggesting the possibility of enabling a strain-controlled response in Si-NC ensambles.

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preprint2011arXiv

Local-field effects in silicon nanoclusters

The effect of the local fields on the absorption spectra of silicon nanoclusters (NCs), freestanding or embedded in SiO2, is investigated in the DFT-RPA framework for different size and amorphization of the samples. We show that local field effects have a great influence on the optical absorption of the NCs. Their effect can be described by two separate contributions, both arising from polarization effects at the NC interface. First, local fields produce a reduction of the absorption that is stronger in the low energy limit. This contribution is a direct consequence of the screening induced by polarization effects on the incoming field. Secondly, local fields cause a blue shift on the main absorption peak that has been explained in terms of perturbation of the absorption resonance conditions. Both contributions do not depend either on the NC diameter nor on its amorphization degree, while showing a high sensitivity to the environment enclosing the NCs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

In recent years many experiments have demonstrated the possibility to achieve efficient photoluminescence from Si/SiO2 nanocrystals. While it is widely known that only a minor portions of the nanocrystals in the samples contribute to the observed photoluminescence, the high complexity of the Si/SiO2 interface and the dramatic sensitivity to the fabrication conditions make the identification of the most active structures at the experimental level not a trivial task. Focusing on this aspect we have addressed the problem theoretically, by calculating the radiative recombination rates for different classes of Si-nanocrystals in the diameter range of 0.2-1.5 nm, in order to identify the best conditions for optical emission. We show that the recombination rates of hydrogenated nanocrystals follow the quantum confinement feature in which the nanocrystal diameter is the principal quantity in determining the system response. Interestingly, a completely different behavior emerges from the OH-terminated or SiO2-embedded nanocrystals, where the number of oxygens at the interface seems intimately connected to the recombination rates, resulting the most important quantity for the characterization of the optical yield in such systems. Besides, additional conditions for the achievement of high rates are constituted by a high crystallinity of the nanocrystals and by high confinement energies (small diameters).

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Local-fields and disorder effects in free-standing and embedded Si nanocrystallites

The case study of a 32-atoms Si nanocrystallite (NC) embedded in a SiO2 matrix, both crystalline and amorphous, or free-standing with different conditions of passivation and strain is analyzed through ab-initio approaches. The Si32/SiO2 heterojunction shows a type I band offset highlighting a separation between the NC plus the interface and the matrix around. The consequence of this separation is the possibility to correctly reproduce the low energy electronic and optical properties of the composed system simply studying the suspended NC plus interface oxygens with the appropriate strain. Moreover, through the definition of an optical absorption threshold we found that, beside the quantum confinement trend, the amorphization introduces an additional redshift that increases with increasing NC size: i.e. the gap tends faster to the bulk limit. Finally, the important changes in the calculated DFT-RPA optical spectra upon inclusion of local fields point towards the need of a proper treatment of the optical response of the interface region.

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preprint2010arXiv

Self-Energy and Excitonic Effects in the Electronic and Optical Properties of TiO2 Crystalline Phases

We present a unified ab-initio study of electronic and optical properties of TiO2 rutile and anatase phases, with a combination of Density Functional Theory and Many Body Perturbation Theory techniques. The consistent treatment of exchange-correlation, with the inclusion of many body one-particle and two-particles effects in self-energy and electron-hole interaction, produces a high quality description of electronic and optical properties, giving, for some quantities, the first available estimation for this compound. In particular, we give a quantitative, direct evaluation of the electronic and direct optical gaps, clarifying their role with respect to previous values obtained by various experimental techniques. We obtain a description for both electronic gap and optical spectra that is consistent with experiments, analysing the role of different contributions to the experimental optical gap and relating them to the level of theory used in our calculations. We also show the spatial nature of excitons in the two crystalline phases, highlighting the localization character of different optical transitions. This paper aims at understanding and firmly establishing electro-optical bulk properties, so far not yet clarified, of this material of fundamental and technological interest for green energy applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size

We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix, with that of free-standing, hydrogenated and hydroxided silicon nanoclusters of corresponding size and shape. We find that the largest effect on the opto-electronic behavior is due to the amorphization of the embedded nanocluster. In that, the amorphization reduces the fundamental gap while increasing the absorption strength in the visible range. Increasing the nanocluster size does not change substantially this picture but only leads to the reduction of the absorption threshold, following the quantum confinement rule. Finally, through the calculation of the optical absorption spectra both in a indipendent-particle and many-body approach, we show that the effect of local fields is crucial for describing properly the optical behavior of the crystalline case while it is of minor importance for amorphous systems.

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preprint2010arXiv

Size, oxidation, and strain in small Si/SiO2 nanocrystals

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended nanocrystals shows that the silica matrix produces a strain on the embedded NCs, that contributes to determine the band gap value. By including the strain on the hydroxided nanocrystals we are able to reproduce the electronic and optical properties of the full Si/SiO2 systems. Moreover we found that, while the quantum confinement dominates in the hydrogenated nanocrystals of all sizes, the behaviour of hydroxided and embedded nanocrystals strongly depends on the interface oxidation degree, in particular for diameters below 2 nm. Here, the proportion of NC atoms at the Si/SiO2 interface becomes relevant, producing surface-related states that may affect the quantum confinement appearing as inner band gap states and then drastically changing the optical response of the system.

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