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Researcher profile

Stefano Ossicini

Stefano Ossicini contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2022arXiv

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the near-band-edge states localization, as well as the band-offset properties between Si and Ge regions, are investigated in detail. On the one hand, we prove that Si(core)/Ge(shell) nanocrystals always show a type II band-offset alignment, with the HOMO mainly localized on the Ge shell region and the LUMO mainly localized on the Si core region. On the other hand, our results point out that a type II offset cannot be observed in small (diameter less than 3 nm) Ge(core)/Si(shell) nanocrystals. In these systems, quantum confinement and strain drive the near-band-edge states to be mainly localized on Ge atoms inducing a type I alignment. In larger Ge(core)/Si(shell) nanocrystals, instead, the formation of a type II offset can be engineered by playing with both core and shell thickness. The conditions that favor the transition from a type I to a type II alignment for Ge(core)/Si(shell) nanocrystals are discussed in detail.

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preprint2010arXiv

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

In recent years many experiments have demonstrated the possibility to achieve efficient photoluminescence from Si/SiO2 nanocrystals. While it is widely known that only a minor portions of the nanocrystals in the samples contribute to the observed photoluminescence, the high complexity of the Si/SiO2 interface and the dramatic sensitivity to the fabrication conditions make the identification of the most active structures at the experimental level not a trivial task. Focusing on this aspect we have addressed the problem theoretically, by calculating the radiative recombination rates for different classes of Si-nanocrystals in the diameter range of 0.2-1.5 nm, in order to identify the best conditions for optical emission. We show that the recombination rates of hydrogenated nanocrystals follow the quantum confinement feature in which the nanocrystal diameter is the principal quantity in determining the system response. Interestingly, a completely different behavior emerges from the OH-terminated or SiO2-embedded nanocrystals, where the number of oxygens at the interface seems intimately connected to the recombination rates, resulting the most important quantity for the characterization of the optical yield in such systems. Besides, additional conditions for the achievement of high rates are constituted by a high crystallinity of the nanocrystals and by high confinement energies (small diameters).

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preprint2010arXiv

Local-fields and disorder effects in free-standing and embedded Si nanocrystallites

The case study of a 32-atoms Si nanocrystallite (NC) embedded in a SiO2 matrix, both crystalline and amorphous, or free-standing with different conditions of passivation and strain is analyzed through ab-initio approaches. The Si32/SiO2 heterojunction shows a type I band offset highlighting a separation between the NC plus the interface and the matrix around. The consequence of this separation is the possibility to correctly reproduce the low energy electronic and optical properties of the composed system simply studying the suspended NC plus interface oxygens with the appropriate strain. Moreover, through the definition of an optical absorption threshold we found that, beside the quantum confinement trend, the amorphization introduces an additional redshift that increases with increasing NC size: i.e. the gap tends faster to the bulk limit. Finally, the important changes in the calculated DFT-RPA optical spectra upon inclusion of local fields point towards the need of a proper treatment of the optical response of the interface region.

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preprint2010arXiv

Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size

We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix, with that of free-standing, hydrogenated and hydroxided silicon nanoclusters of corresponding size and shape. We find that the largest effect on the opto-electronic behavior is due to the amorphization of the embedded nanocluster. In that, the amorphization reduces the fundamental gap while increasing the absorption strength in the visible range. Increasing the nanocluster size does not change substantially this picture but only leads to the reduction of the absorption threshold, following the quantum confinement rule. Finally, through the calculation of the optical absorption spectra both in a indipendent-particle and many-body approach, we show that the effect of local fields is crucial for describing properly the optical behavior of the crystalline case while it is of minor importance for amorphous systems.

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preprint2010arXiv

Size, oxidation, and strain in small Si/SiO2 nanocrystals

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended nanocrystals shows that the silica matrix produces a strain on the embedded NCs, that contributes to determine the band gap value. By including the strain on the hydroxided nanocrystals we are able to reproduce the electronic and optical properties of the full Si/SiO2 systems. Moreover we found that, while the quantum confinement dominates in the hydrogenated nanocrystals of all sizes, the behaviour of hydroxided and embedded nanocrystals strongly depends on the interface oxidation degree, in particular for diameters below 2 nm. Here, the proportion of NC atoms at the Si/SiO2 interface becomes relevant, producing surface-related states that may affect the quantum confinement appearing as inner band gap states and then drastically changing the optical response of the system.

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