Researcher profile

Stefan Klotz

Stefan Klotz contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Evolution of magnetic order in van-der-Waals antiferromagnet FePS$_3$ through insulator-metal transition

Layered van-der-Waals 2D magnetic materials are of great interest in fundamental condensed-matter physics research, as well as for potential applications in spintronics and device physics. We present neutron powder diffraction data using new ultra-high-pressure techniques to measure the magnetic structure of Mott-insulating 2D honeycomb antiferromagnet FePS$_3$ at pressures up to 183 kbar and temperatures down to 80 K. These data are complemented by high-pressure magnetometry and reverse Monte Carlo modeling of the spin configurations. As pressure is applied, the previously-measured ambient-pressure magnetic order switches from an antiferromagnetic to a ferromagnetic interplanar interaction, and from 2D-like to 3D-like character. The overall antiferromagnetic structure within the $ab$ planes, ferromagnetic chains antiferromagnetically coupled, is preserved, but the magnetic propagation vector is altered from $(0\:1\:\frac{1}{2})$ to $(0\:1\:0)$, a halving of the magnetic unit cell size. At higher pressures, coincident with the second structural transition and the insulator-metal transition in this compound, we observe a suppression of this long-range-order and emergence of a form of magnetic short-range order which survives above room temperature. Reverse Monte Carlo fitting suggests this phase to be a short-ranged version of the original ambient pressure structure - with a return to antiferromagnetic interplanar correlations. The persistence of magnetism well into the HP-II metallic state is an observation in seeming contradiction with previous x-ray spectroscopy results which suggest a spin-crossover transition.

preprint2020arXiv

Structural phase transition and bandgap control through mechanical deformation in layered semiconductors 1T-ZrX2 (X = S, Se)

Applying elastic deformation can tune a material physical properties locally and reversibly. Spatially modulated lattice deformation can create a bandgap gradient, favouring photo-generated charge separation and collection in optoelectronic devices. These advantages are hindered by the maximum elastic strain that a material can withstand before breaking. Nanomaterials derived by exfoliating transition metal dichalcogenides TMDs are an ideal playground for elastic deformation, as they can sustain large elastic strains, up to a few percent. However, exfoliable TMDs with highly strain-tunable properties have proven challenging for researchers to identify. We investigated 1T-ZrS2 and 1T-ZrSe2, exfoliable semiconductors with large bandgaps. Under compressive deformation, both TMDs dramatically change their physical properties. 1T-ZrSe2 undergoes a reversible transformation into an exotic three-dimensional lattice, with a semiconductor-to-metal transition. In ZrS2, the irreversible transformation between two different layered structures is accompanied by a sudden 14 % bandgap reduction. These results establish that Zr-based TMDs are an optimal strain-tunable platform for spatially textured bandgaps, with a strong potential for novel optoelectronic devices and light harvesting.