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Researcher profile

Stefan Facsko

Stefan Facsko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.stat-mechnlin.PSphysics.ins-det

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Published work

6 published item(s)

preprint2016arXiv

Nano patterns self-aligned to Ga dimer rows on GaAs surfaces

Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material dependent dynamic recrystallization temperature however, the surface remains crystalline and ion beam irradiation produces regular arrays of faceted ripples on III-V semiconductors. This provides a powerful single-step technique for the production of nanostructures on a large area. On $(001)$ surfaces these ripples are parallel to the $[1\bar{1}0]$ direction without any external anisotropy. The origin of this self-alignment was not fully understood until now. A simple experiment exposing the front side and back side of a GaAs$(001)$ wafer to the ion beam clarifies its origin and proves that the ripples align to the Ga dimer rows. As the direction of Ga dimer rows rotates by 90° on the back side, the orientation of the ripples also rotates by 90° to $[110]$. We discuss the experimental results in view of a model where the pattern formation is driven by creation of vacancies and ad-atoms by the ion beam and their diffusion, which is linked to the direction of dimers on the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry

Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental mapping as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed.

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preprint2014arXiv

Charge Exchange and Energy Loss of Slow Highly Charged Ions in 1nm Thick Carbon Nanomembranes

Experimental charge exchange and energy loss data for the transmission of slow highly charged Xe ions through ultra-thin polymeric carbon membranes are presented. Surprisingly, two distinct exit charge state distributions accompanied by charge exchange dependent energy losses are observed. The energy loss for ions exhibiting large charge loss shows a quadratic dependency on the incident charge state indicating that equilibrium stopping force values do not apply in this case. Additional angle resolved transmission measurements point on a significant contribution of elastic energy loss. The observations show that regimes of different impact parameters can be separated and thus a particle's energy deposition in an ultra-thin solid target may not be described in terms of an averaged energy loss per unit length.

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preprint2013arXiv

Reverse epitaxy of Ge: ordered and facetted surface patterns

Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250°C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high fluence irradiations these patterns exhibit well developed facets. A deterministic nonlinear continuum equation accounting for the effective surface currents due to an Ehrlich-Schwoebel barrier for diffusing vacancies reproduces remarkably well our experimental observations.

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preprint2012arXiv

Dynamic effects induced by renormalization in anisotropic pattern forming systems

The dynamics of patterns in large two-dimensional domains remains a challenge in non-equilibrium phenomena. Often it is addressed through mild extensions of one-dimensional equations. We show that full 2D generalizations of the latter can lead to unexpected dynamical behavior. As an example we consider the anisotropic Kuramoto-Sivashinsky equation, that is a generic model of anisotropic pattern forming systems and has been derived in different instances of thin film dynamics. A rotation of a ripple pattern by $90^{\circ}$ occurs in the system evolution when nonlinearities are strongly suppressed along one direction. This effect originates in non-linear parameter renormalization at different rates in the two system dimensions, showing a dynamical interplay between scale invariance and wavelength selection. Potential experimental realizations of this phenomenon are identified.

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preprint2010arXiv

Nanopatterning of Si surfaces by normal incident ion erosion: influence of metal incorporation on surface morphology evolution

The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration in the surface is above 8x10^14 cm^-2. This is interpreted in terms of an additional surface instability due to non-uniform sputtering in connection with metal enrichment at the nanodots. At low metal concentration smoothing dominates and pattern formation is thus inhibited. The transition from a k^-2 to a k^-4 behavior in the asymptotic power spectral density function supports the conclusion that ballistic smoothing and ion-enhanced viscous flow are the two dominant mechanisms of surface relaxation.

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