Source author record

Soumya Biswas

Soumya Biswas appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el physics.app-ph

Catalog footprint

What is connected

3works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications

Tin Selenide (SnSe) thin films were grown onto glass and alumina substrates by Chemical Vapor Deposition (CVD) method. The structural, micro-structural and morphological characterizations of the as grown thin films were investigated using XRD, SEM and Raman spectroscopy which reveals that the films on glass are phase pure oriented SnSe while those on Alumina are polycrystalline SnSe with SnSe2 impurity phase. The optical properties of the films grown onto glass substrate were studied by UV-vis spectroscopy. The optical band gap calculated is 1 to 1.3 eV for indirect and direct transition in film deposited on glass substrates. The Arrhenius plots of the two films show very different thermal activations i.e. 0.088 eV for tin vacancy acceptor level close to valance band maxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2. Photoresponse was observed by illuminating the sample (Glass and alumina Substrate) using white and UV light (400 nm) for a fixed time pulses. The deposited onto Alumina substrate were found to show better photoresponse due to SnSe/SnSe2 p-n heterojunctions.

preprint2021arXiv

Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids

ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that selective enhancement in phonon scattering leads to increase in zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt% RGO into ZnO (AGZO) has been found to show significant enhancement in zT (=0.52 at 1100 K) which is an order of magnitude larger compared to that of bare undoped ZnO. Photoluminescence and X-ray photoelectron spectroscopy measurements confirm that RGO encapsulation significantly quenches surface oxygen vacancies in ZnO along with nucleation of new interstitial Zn donor states. Tunneling spectroscopy reveals that the band gap of ~ 3.4 eV for bare ZnO reduces effectively to ~ 0.5 eV upon RGO encapsulation, facilitating charge transport. The electrical conductivity enhancement also benefits from the more than 95% densification achieved, using the spark plasma sintering method, which aids reduction of GO into RGO. The same Al doping and RGO capping synergistically brings about drastic reduction of thermal conductivity, through enhanced phonon-phonon and point defect-phonon scatterings. These opposing effects on electrical and thermal conductivities enhances the power factors as well as the zT value. Overall, a practically viable route for synthesis of oxide - RGO TE material which could find its practical applications for the high-temperature TE power generation.

preprint2020arXiv

Proof-of-concept thermoelectric oxygen sensor exploiting oxygen mobility of GdBaCo2O5+δ

In this paper, we demonstrate a proof-of-concept oxygen sensor based on the thermoelectric principle using polycrystalline $GdBaCo_2O_{5+δ}$ where 0.45<$δ$<0.55 (GDCO). The lattice oxygen in layered double perovskite oxides is highly susceptible to the ambient oxygen partial pressure. The as-synthesized GDCO sample processed in ambient conditions shows pure orthorhombic ($P_{mmm}$ space group) phase and a $δ$-value close to 0.5 as confirmed from X-ray diffraction reitveld refinement. The X-ray photoelectron spectroscopy shows significant $Co^{3+}$ oxidation state in non-octahedral sites in addition to $Co^{3+}$ and $Co^{4+}$ in octahedral sites. The insulator-to-metal transition (MIT) is observed at nearly 340 K as seen in electrical resistivity and seebeck coefficient measurements. The seebeck coefficient shows a large change of about 10-13 $μ$V/K with time constant of ~20 sec, at room temperature (300 K) when the gas ambience changes from 100% oxygen to 100% nitrogen and vice versa, under a constant temperature gradient of 1 K. The response in seebeck is found to be particularly large below MIT. The diffusion of oxygen into the lattice leading to hole doping shows a large change in carrier concentration resulting in a large change in the seebeck coefficient in insulating state. On the other hand, due to insignificant increase in already large carrier concentration in metallic state the change in seebeck is minimal. Nevertheless, below MIT the response is fairly reproducible within stoichiometry $δ$ = 0.5 $\pm$ 0.05. This principle shall be of significant utility to design the oxygen sensors which work at room temperature or even cryogenic temperatures.