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Soumya Bandyopadhyay

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cond-mat.mtrl-sci

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preprint2022arXiv

A phase field model combined with genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics

Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are shortcomings in understanding ferroelectric switching, which is crucial in the operation of these devices. Here a computational model based on phase field method is developed to simulate the switching behavior of polycrystalline HZO thin films. Furthermore, we introduce a novel approach to optimize the effective Landau coefficients describing the free energy of HZO by combining the phase field model with a genetic algorithm. We validate the model by accurately simulating switching curves for HZO thin films with different ferroelectric phase fractions. The simulated domain dynamics during switching also shows amazing similarity to the available experimental observations. The present work also provides fundamental insights into enhancing the ferroelectricity in HZO thin films by controlling grain morphology and crystalline texture. It can potentially be extended to improve the ferroelectric properties of other hafnia based thin films.

preprint2021arXiv

Stability, Evolution and Switching of Ferroelectric Domain Structures in Lead-free BaZr$_{0.2}$Ti$_{0.8}$O$_3$-Ba$_{0.7}$Ca$_{0.3}$TiO$_3$ System: Thermodynamic Analysis and Phase-field Simulations

Enhanced room-temperature electromechanical coupling in the lead-free ferroelectric system $(1-x)$BaZr$_{0.2}$Ti$_{0.8}$O$_{3}$ - $x$Ba$_{0.7}$Ca$_{0.3}$TiO$_{3}$ (abbreviated as BZCT) at $x=0.5$ is attributed to the existence of a morphotropic phase region (MPR) containing an intermediate orthorhombic ($O$) phase between terminal rhombohedral ($R$) BZT and tetragonal ($T$) BCT phases. However, there is ambiguity regarding the morphotropic phase transition in BZCT at room temperature - while some experiments suggest a single $O$ phase within the MPR, others indicate coexistence of three polar phases ($T+R+O$). Therefore, to understand the thermodynamic stability of polar phases and its relation to electromechanical switching during morphotropic phase transition in BZCT, we develop a Landau potential based on the theory of polar anisotropy. Since intrinsic electrostrictive anisotropy changes as a function of electromechanical processing, we establish a correlation between the parameters of our potential and the coefficients of electrostriction. We also conducted phase-field simulations based on this potential to demonstrate changes in domain configuration from single-phase $O$ to three-phase $T+R+O$ at the equimolar composition with the increase in electrostrictive anisotropy. Diffusionless phase diagrams and the corresponding piezoelectric coefficients obtained from our model compare well with the experimental findings. Increase in electrostrictive anisotropy increases the degeneracy of the free energy at ambient temperature and pressure leading to decreasing polar anisotropy, although there is an accompanying increase in the electromechanical anisotropy manifested by an increase in the difference between effective longitudinal and transverse piezo-coefficients, $d_{33}$ and $d_{31}$.