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JiYoung Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Published work
We review the construction of the adiabatic expansion for Bose and Fermi systems and show how it may be used to explore the chiral and parity anomalies for Dirac fermions without the need to compute Feynman diagrams.
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and ferroelectric tunneling junctions. However, there are shortcomings in understanding ferroelectric switching, which is crucial in the operation of these devices. Here a computational model based on phase field method is developed to simulate the switching behavior of polycrystalline HZO thin films. Furthermore, we introduce a novel approach to optimize the effective Landau coefficients describing the free energy of HZO by combining the phase field model with a genetic algorithm. We validate the model by accurately simulating switching curves for HZO thin films with different ferroelectric phase fractions. The simulated domain dynamics during switching also shows amazing similarity to the available experimental observations. The present work also provides fundamental insights into enhancing the ferroelectricity in HZO thin films by controlling grain morphology and crystalline texture. It can potentially be extended to improve the ferroelectric properties of other hafnia based thin films.
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the doping mechanism. Furthermore, the electrical characterization demonstrates that p-type doping of MoS2 is achieved by nitrogen doping, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional doping in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen doping concentration and compressive strain in MoS2 is elucidated.
Bimetallic nanoalloys such as nanoparticles and nanowires are attracting significant attention due to their vast potential applications such as in catalysis and nanoelectronics. Notably, Pd-Pt nanoparticles/nanowires are being widely recognized as catalysts and hydrogen sensors. Compared to unary systems, alloys present more structural complexity with various compositional configurations. Therefore, it is important to understand energetically preferred atomic structures of bimetallic nanoalloys. In this study, we performed a series of simulated annealing Monte Carlo simulations to predict the energetically stable atomic arrangement of Pd-Pt nanoparticles and nanowires as a function of composition based on a set of carefully designed empirical potential models. Both the Pd-Pt nanoparticles and nanowires exhibit quasi-ordered configurations, quite similar to bulk alloy phases such as the $\rm L1_0$ and the $\rm L1_2$ structures with substantial surface segregation effects. We believe that this study can provide a theoretical guide for the design of various bimetallic nanomaterials.