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Sonny Vo

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Published work

3 published item(s)

preprint2019arXiv

Optomechanical Detection of Light with Orbital Angular Momentum

We present an optomechanical device designed to allow optical transduction of orbital angular momentum of light. An optically induced twist imparted on the device by light is detected using an integrated cavity optomechanical system based on a nanobeam slot-mode photonic crystal cavity. This device could allow measurement of the orbital angular momentum of light when photons are absorbed by the mechanical element, or detection of the presence of photons when they are scattered into new orbital angular momentum states by a sub-wavelength grating patterned on the device. Such a system allows detection of a $l = 1$ orbital angular momentum field with an average power of $3.9\times10^3$ photons modulated at the mechanical resonance frequency of the device and can be extended to higher order orbital angular momentum states.

preprint2014arXiv

Fast carrier dynamics in GaAs photonic crystals near the material band edge at room temperature

We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band femtosecond pulse cause a substantial blue-shift in the cavity peak. The experimental results are compared to theoretical models based on free carrier effects near the GaAs band edge. The probe transmission is modified for an estimated above-band pump energy of 4.2 fJ absorbed in the GaAs slab.

preprint2014arXiv

Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in undoped crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.