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Researcher profile

Sonakshi Arora

Sonakshi Arora contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-sciphysics.pop-ph

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Published work

3 published item(s)

preprint2022arXiv

Breakdown of spin-to-helicity locking at the nanoscale in topological photonic crystal edge states

We measure the local near-field spin in topological edge state waveguides that emulate the quantum spin Hall effect. We reveal a highly structured spin density distribution that is not linked to a unique pseudospin value. From experimental near-field real-space maps and numerical calculations, we confirm that this local structure is essential in understanding the properties of optical edge states and light-matter interactions. The global spin is reduced by a factor of 30 in the near field and, for certain frequencies, flipped compared to the pseudospin measured in the far-field. We experimentally reveal the influence of higher-order Bloch harmonics in spin inhomogeneity, leading to a breakdown in the coupling between local helicity and global spin.

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preprint2022arXiv

Interplay of leakage radiation and protection in topological photonic crystal cavities

The introduction of topological concepts to the design of photonic crystal cavities holds great promise for applications in integrated photonics due to the prospect of topological protection. This study examines the signatures of topological light confinement in the leakage radiation of two-dimensional topological photonic crystal cavities. The cavities are implemented in an all-dielectric platform that features the photonic quantum spin Hall effect at telecom wavelengths and supports helical edge states that are weakly coupled to the radiation continuum. The modes of resonators scaling down to single point defects in the surrounding bulk lattice are characterized via spectral position and multipolar nature of the eigenstates. The mode profiles in real and momentum space are mapped using far field imaging and Fourier spectropolarimetry, revealing how certain properties of the cavity modes reflect on their origin in the topological bandstructure. This includes band-inversion-induced confinement and inverted scaling of mode spectra for trivial and topological defect cavities. Furthermore, hallmarks of topological protection in the loss rates are demonstrated, which are largely unaffected by cavity shape and size. The results constitute an important step toward the use of radiative topological cavities for on-chip confinement of light, control of emitted wave fronts, and enhancing light-matter interactions.

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preprint2019arXiv

Intrinsic and Extrinsic Defect-related Excitons in TMDCs

We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entire range of behaviors of defect-related excitons can be understood in terms of a simple model, where neutral excitons are bound to ionized donor levels, likely related to sulphur vacancies, with a density of $7\cdot10^{11} cm^{-2}$. Second, to study the extrinsic origin of defect-related excitons, we controllably deposit oxygen molecules in-situ onto the surface of $MoS_2$ kept at cryogenic temperature. We find that in addition to trivial p-doping of $3\cdot10^{12} cm^{-2}$, oxygen affects the formation of defect-related excitons by functionalizing the vacancy. Combined, our results uncover the origin of defect-related excitons, suggest a simple and conclusive approach to track the functionalization of TMDCs, benchmark device quality, and pave the way towards exciton engineering in hybrid organic-inorganic TMDC devices.

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