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Somnath Bhattacharyya

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Published work

14 published item(s)

preprint2022arXiv

Holonomic control of a three-qubits system in an NV center using a near-term quantum computer

The holonomic approach to controlling (nitrogen-vacancy) NV-center qubits provides an elegant way of theoretically devising universal quantum gates that operate on qubits via calculable microwave pulses. There is, however, a lack of simulated results from the theory of holonomic control of quantum registers with more than two qubits describing the transition between the dark states. In light of this, we have been experimenting with the IBM Quantum Experience technology to determine the capabilities of simulating holonomic control of NV-centers for three qubits describing an eight-level system that produces a non-Abelian geometric phase. The tunability of the geometric phase via the detuning frequency is demonstrated through the high fidelity (about 80%) of 3-qubit off-resonant holonomic gates over the on-resonant ones. The transition between the dark states shows the alignment of the gate dark state with the qubits initial state hence decoherence of the multi-qubit system is well-controlled through a 0.33pi rotation. The electron return probability can exhibit spin-orbit coupling-like behavior as observed in topological materials based on the extra geometric phase.

preprint2022arXiv

Resonantly-driven nanopores can serve as nanopumps

Inducing transport in electrolyte-filled nanopores with dc fields has led to influential applications ranging from nanosensors to DNA sequencing. Here we use the Poisson-Nernst-Planck and Navier-Stokes equations to show that unbiased ac fields can induce comparable directional flows in gated conical nanopores. This flow exclusively occurs at intermediate driving frequencies and hinges on the resonance of two competing timescales, representing space charge development at the ends and in the interior of the pore. We summarize the physics of resonant nanopumping in an analytical model that reproduces the results of numerical simulations. Our findings provide a generic route towards real-time controllable flow patterns, which might find applications in controlling the translocation of particles such as small molecules or nanocolloids.

preprint2020arXiv

Emulating coherent backscattering in multipath tunnel systems on a near-term Quantum computer

Superconducting qubits already demonstrated potential in emulating coherent back scattering or weak localization (WL) and tunnelling phenomena however, in a real multipath system they have not been verified yet.Here we show how a double-path system can be emulated by a quantum device through construction of multiple scattering centers in closed paths (detune boxes) and tunnel barriers with a large return probability (Pr) of electrons. Incorporation of such arrangements of tunnel barriers can add an extra geometric phase and demonstrate Aharonov-Bohm type oscillations (phi)0 and (phi/2)0 in a ring and a tube, respectively. A combination of inter and intra layer tunnelling in a double-path circuit creates a phase reversal and subsequently weak anti-localization (WAL) effect with a long coherence time. Finally, angle dependence of Pr firmly establishes stability of the two-path circuit which is also associated with a phase reversal due to the inter-path resonance.

preprint2019arXiv

Experimental Simulation of Hybrid Quantum Systems and Entanglement on a Quantum Computer

We propose the utilization of the IBM Quantum Experience quantum computing system to simulate different scenarios involving common hybrid quantum system components, the Nitrogen Vacancy Centre (NV centre) and the Flux Qubit. We perform a series of the simulation experiments and demonstrate properties of a virtual hybrid system, including its spin relaxation rate and state coherence. In correspondence with experimental investigations we look at the scalability of such systems and show that increasing the number of coupled NV centres decreases the coherence time. We also establish the main error rate as a function of the number of control pulses in evaluating the fidelity of the four qubit virtual circuit with the simulator. Our results show that the virtual system can attain decoherence and fidelity values comparable to what has been reported for experimental investigations of similar physical hybrid systems, observing a coherence time at 0.35 s for a single NV centre qubit and fidelity in the range of 0.82. The work thus establishes an effective simulation test protocol for different technologies to test and analyze them before experimental investigations or as a supplementary measure.

preprint2015arXiv

Observation of impedance oscillations in single walled carbon nanotube bundles excited by high frequency signals

We report experimental observation of impedance oscillations in single-walled carbon nanotubes measured from 100 MHz to 65 GHz on coplanar wave guides and a power law dependence of the differential conductance with bias voltage. From the crossover of the real and imaginary parts of the complex impedance observed in the range of 10 GHz, we estimate a long lifetime of 15 ps that can support the claim of ballistic transport. By measuring the scattering parameters at high-frequencies of a few aligned single-walled bundles at low temperatures we show that, this observation is strongly influenced by the number of tubes available.

preprint2015arXiv

Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires

We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge states associated with skipping orbits at nanowire edges and confined pure orbits in the interior of the nanowires we derive electron effective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19 fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2. However, at low temperature the observed oscillation amplitude invariant of the field is attributed to not only a strong size confinement and the pinning of orbits by impurities but also Aharanov Bohm (AB) oscillations due to edge-states that propagate quasi-ballistically through the nanowire. The overall oscillation on a linear positive magnetoresistance background can be attributed to temperature-dependent crossover of Shubnikov de Haas oscillations (SdHO) and AB oscillations in silicon nanowires.

preprint2013arXiv

Emergence of nanoscale inhomogeneity in the superconducting state of a homogeneously disordered conventional superconductor, NbN

The notion of spontaneous formation of an inhomogeneous superconducting state is at the heart of most theories attempting to understand the superconducting state in the presence of strong disorder. Using scanning tunneling spectroscopy and high resolution scanning transmission electron microscopy, we experimentally demonstrate that under the competing effects of strong homogeneous disorder and superconducting correlations, the superconducting state of a conventional superconductor, NbN, spontaneously segregates into domains. Tracking these domains as a function of temperature we observe that the superconducting domains persist across the bulk superconducting transition, Tc, and disappear close to the pseudogap temperature, T*, where signatures of superconducting correlations disappear from the tunneling spectrum and the superfluid response of the system.

preprint2013arXiv

Sample dispersion in isotachophoresis with Poiseuille counterflow

A particular mode of isotachophoresis (ITP) employs a pressure-driven flow opposite to the sample electromigration direction in order to anchor a sample zone at a specific position along a channel or capillary. We investigate this situation using a two-dimensional finite-volume model based on the Nernst-Planck equation. The imposed Poiseuille flow profile leads to a significant dispersion of the sample zone. This effect is detrimental for the resolution in analytical applications of ITP. We investigate the impact of convective dispersion, characterized by the area-averaged width of a sample zone, for various values of the sample Péclet-number, as well as the relative mobilities of the sample and the adjacent electrolytes. A one-dimensional model for the area-averaged concentrations based on a Taylor-Aris-type effective axial diffusivity is shown to yield good agreement with the finite-volume calculations. This justifies the use of such simple models and opens the door for the rapid simulation of ITP protocols with Poiseuille counterflow.

preprint2012arXiv

Conductivity crossover in nano-crystalline diamond films: Realization of a disordered superlattice-like structure

We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance measurements at low temperatures we firmly establish a conductivity crossover from hopping to 3D weak localization. The long electronic dephasing time and its weak temperature dependence suggest the possibility for diamond-based high-speed device applications.

preprint2012arXiv

Direct evidence of intercalation in a topological insulator turned superconductor

A topological insulator Bi2Se3 which shows superconducting property due to Cu doping has been studied using high resolution transmission electron microscopy which provides for the first time, the direct evidence of intercalation sites. A careful study exhibits the presence of two intercalation sites in this material when projected along the [-1-1 2 0] direction. Stoichiometry of the intercalated unit cell was also calculated from the projected potential.

preprint2012arXiv

Theoretical model of structure-dependent conductance crossover in disordered carbon

We analyze the effects of sp^2/sp^3 bond-aspect ratio on the transport properties of amorphous carbon quasi-1D structures where structural disorder varies in a very non-linear manner with the effective bandgap. Using a tight-binding approach the calculated electron transmission showed a high probability over a wide region around the Fermi-level for sp^2-rich carbon and also distinct peaks close to the band edges for sp^3-rich carbon structures. This model shows a sharp rise of the structure resistance with the increase of sp^3C % followed by saturation in the wide bandgap regime for carbon superlattice-like structures and suggests the tuneable characteristic time of carbon-based devices.

preprint2011arXiv

Origin of conductivity cross over in entangled multi-walled carbon nanotube network filled by iron

A realistic transport model showing the interplay of the hopping transport between the outer shells of iron filled entangled multi-walled carbon nanotubes (MWNT) and the diffusive transport through the inner part of the tubes, as a function of the filling percentage, is developed. This model is based on low-temperature electrical resistivity and magneto-resistance (MR) measurements. The conductivity at low temperatures showed a crossover from Efros-Shklovski (E-S) variable range hopping (VRH) to Mott VRH in 3 dimensions (3D) between the neighboring tubes as the iron weight percentage is increased from 11% to 19% in the MWNTs. The MR in the hopping regime is strongly dependent on temperature as well as magnetic field and shows both positive and negative signs, which are discussed in terms of wave function shrinkage and quantum interference effects, respectively. A further increase of the iron percentage from 19% to 31% gives a conductivity crossover from Mott VRH to 3D weak localization (WL). This change is ascribed to the formation of long iron nanowires at the core of the nanotubes, which yields a long dephasing length (e.g. 30 nm) at the lowest measured temperature. Although the overall transport in this network is described by a 3D WL model, the weak temperature dependence of inelastic scattering length expressed as L_phi ~T^-0.3 suggests the possibility for the presence of one-dimensional channels in the network due to the formation of long Fe nanowires inside the tubes, which might introduce an alignment in the random structure.

preprint2010arXiv

Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based on magneto-resistance studies at low temperatures. Also, low temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in 2DWL or strong localization regime. The corresponding dephasing time of electronic wavefunctions in these systems described as ~ T^-p with p < 1, follows a relatively weak temperature dependence compared to the generally expected nature for bulk dirty metals having $p \geq 1$. The temperature dependence of Hall (electron) mobility together with an enhanced electron density has been used to interpret the unusual magneto-transport features and show delocalized electronic transport in these n-type UNCD films, which can be described as low-dimensional superlattice structures.

preprint2010arXiv

Anomalous Raman features of silicon nanowires under high pressure

The potential of silicon nanowires (SiNWs), (diameter < 10 nm) to transform into rigid bundle-like structures with distinct phonon confinement under high pressure (<= 15 GPa), instead of amorphising as per previous reports, is demonstrated using in-situ Raman spectroscopy. The newly observed splitting of the second order transverse optical (2TO) Raman mode into 2TO(L) and 2TO(W) phonon modes at >= 5 GPa establishes a highly anisotropic and mode-dependent pressure response of these SiNWs. Properties of the novel structures are superior compared to other nano-structured silicon and bulk-Si in terms of increased linear modulus, more localized phonon confinement and less anharmonicity.