Researcher profile

Sohee Kwon

Sohee Kwon contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

Structural tuning magnetism and topology in a magnetic topological insulator

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain accompanied by a simultaneous enhancement in the magnetic ordering strength. Combining these experimental results with first-principle calculations we identify structural deformation as a strong tuning parameter to traverse a rich topological phase space and modify magnetism in the magnetically doped BST system.

preprint2020arXiv

Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb

CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high Néel temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of Néel vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin film becomes a ferrimagnet. The MAE is reduced such that its sign can be switched with realistic strain, and the large SOC gives rise to an intrinsic voltage controlled magnetic anisotropy (VCMA). A slab terminated on both faces with Cr remains a compensated AFM, but with the compensation occurring nonlocally between mirror symmetric Cr pairs. In-plane alignment of the moments is preferred, the magnitude of the MAE remains large, similar to that of the bulk, and it is relatively insensitive to filling.