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Researcher profile

Sitaram S. Jaswal

Sitaram S. Jaswal contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.otherphysics.comp-ph

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Published work

4 published item(s)

preprint2012arXiv

Ferroelectric Instability under Screened Coulomb Interactions

We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO3, we demonstrate that ferroelectric displacements are sustained up to the critical concentration of 0.11 electron per unit cell volume. This result is consistent with experimental observations and reveals that the ferroelectric phase and conductivity can coexist. Our investigations show that the ferroelectric instability requires only a short-range portion of the Coulomb force with an interaction range of the order of the lattice constant. These results provide a new insight into the origin of ferroelectricity in displacive ferroelectrics and open opportunities for using doped ferroelectrics in novel electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electric Field Effect on Magnetization and Magnetocrystalline Anisotropy at the Fe/MgO(001) Interface

Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe (001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO3 multilayers

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet interface that alters the interface magnetization when the electric polarization reverses. Using Fe/BaTiO3 multilayers as a representative model we show a sizable difference in magnetic moments of Fe and Ti atoms at the two interfaces dissimilar by the orientation of the local electric dipole moment. The predicted magnetoelectric effect is comparable in magnitude with that observed in elastically-coupled composites and opens a new direction to control magnetic properties of thin-film layered structures by electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Interface-Controlled Ferroelectricity at the Nanoscale

Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises questions about factors controlling ferroelectricity and the nature of the ferroelectric state at the nanoscale. Here we report a first-principles study of KNbO3 ferroelectric thin films placed between two metal electrodes, either SrRuO3 or Pt. We show that the bonding at the ferroelectric-metal interface imposes severe constraints on the displacement of atoms, destroying the bulk tetragonal soft mode in thin ferroelectric films. This does not, however, quench local polarization. If the interface bonding is sufficiently strong the ground state represents a ferroelectric double-domain structure, driven by the intrinsic oppositely-oriented dipole moments at the two interfaces. Although the critical thickness for the net polarization of KNbO3 film is finite - about 1 nm for Pt and 1.8 nm for SrRuO3 electrodes - local polarization persists down to thickness of a unit cell.

0 citations0 reviewsNo code linkedOpen access