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Sisheng Yu

Sisheng Yu contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers

To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O$_3$ and the induced magnetization in Pt show a unique ADMR compared with all other FM and AF systems. A macrospin response model is established and can explain the AF spin configuration and all main ADMR features in the Pt/$α$-Fe$_2$O$_3$ bilayers.

preprint2022arXiv

Electrical Switching of Tristate Antiferromagnetic Néel Order in $α$-Fe$_{2}$O$_{3}$ Epitaxial Films

The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, step-like electrical switching of tri-state Néel order in Pt/$α$-Fe$_2$O$_3$ bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of $α$-Fe$_2$O$_3$ Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.

preprint2020arXiv

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally.