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Fengyuan Yang

Fengyuan Yang contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2026arXiv

Rational Communication Shapes Morphological Composition

Human languages expand vocabularies by combining existing morphemes rather than inventing arbitrary forms. Communicative efficiency shapes lexical systems at multiple levels (Gibson et al., 2019), yet morphological composition -- combining morphemes through compounding or affixation -- has rarely been modeled as a historically situated speaker choice among competing morpheme sequences, leaving unanswered why a language settles on one morpheme combination over other plausible alternatives. We ask whether a trade-off between listener recoverability and speaker production cost can predict attested compositions over contemporaneously available alternatives. Here we show, within the Rational Speech Act (RSA) framework (Frank & Goodman, 2012; Goodman & Frank, 2016) using a time-indexed lexicon constructed from Corpus of Historical American English (COHA) and Corpus of Contemporary American English (COCA), that across 4323 naturally occurring English compounds and derivations spanning 1820--2019, attested compositions are systematically ranked above unattested alternatives generated from contemporaneously available morphemes. Models integrating semantic informativeness with production cost outperform semantic-only and cost-only baselines on Mean Reciprocal Rank (MRR) and top-k accuracy (Acc@k), with the advantage of the Pragmatic Speaker model ($S_1$) over the semantic-only baseline growing as the candidate set expands, where meaning alone leaves morphological choice underdetermined. These findings suggest that lexicalization reflects a communicative trade-off between expressiveness and efficiency, extending rational accounts of communication from utterance-level choice to the internal structure of words.

preprint2025arXiv

Magneto-Optical Analysis of Magnetic Anisotropy in Ultrathin Tm$_{3}$Fe$_{5}$O$_{12}$/Pt Bilayers

Magnetic bilayers consisting of an epitaxially grown ferrimagnetic insulator and a heavy metal layer are attractive for spintronic application because of the opportunity for electric control and read-out of spin textures via spin orbit torque. Here, we investigate ultrathin thulium iron garnet (TmIG)/Pt bilayers when the TmIG layer thickness is 3 nm and below using a sensitive Sagnac magneto-optical Kerr effect technique. We compare the hysteresis loops from out-of-plane and in-plane applied magnetic fields. The preferred magnetization orientation evolves with the TmIG thickness and the presence of the Pt overlayer. We quantify the evolution of the magnetic anisotropy in these ultrathin films and find a significant change even when the TmIG thickness is varied by less than 1 nm. In these ultrathin films, the presence of a Pt overlayer changes the effective anisotropy field by more than a factor of 2, suggesting that the interfacial anisotropy at the Pt/TmIG interface plays a critical role in this regime.

preprint2022arXiv

Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers

To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O$_3$ and the induced magnetization in Pt show a unique ADMR compared with all other FM and AF systems. A macrospin response model is established and can explain the AF spin configuration and all main ADMR features in the Pt/$α$-Fe$_2$O$_3$ bilayers.

preprint2022arXiv

Electrical Switching of Tristate Antiferromagnetic Néel Order in $α$-Fe$_{2}$O$_{3}$ Epitaxial Films

The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn$_2$Au. Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, step-like electrical switching of tri-state Néel order in Pt/$α$-Fe$_2$O$_3$ bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of $α$-Fe$_2$O$_3$ Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.

preprint2022arXiv

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.

preprint2021arXiv

Quantifying Spin-Orbit Torques in Antiferromagnet/Heavy Metal Heterostructures

The effect of spin currents on the magnetic order of insulating antiferromagnets (AFMs) is of fundamental interest and can enable new applications. Toward this goal, characterizing the spin-orbit torques (SOT) associated with AFM/heavy metal (HM) interfaces is important. Here we report the full angular dependence of the harmonic Hall voltages in a predominantly easy-plane AFM, epitaxial c-axis oriented $α$-Fe$_2$O$_3$ films, with an interface to Pt. By modeling the harmonic Hall signals together with the $α$-Fe$_2$O$_3$ magnetic parameters, we determine the amplitudes of field-like and damping-like SOT. Out-of-plane field scans are shown to be essential to determining the damping-like component of the torques. In contrast to ferromagnetic/heavy metal heterostructures, our results demonstrate that the field-like torques are significantly larger than the damping-like torques, which we correlate with the presence of a large imaginary component of the interface spin-mixing conductance. Our work demonstrates a direct way of characterizing SOT in AFM/HM heterostructures.

preprint2021arXiv

Third Harmonic Characterization of Antiferromagnetic Heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. Harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect in heavy-metal/ferromagnet systems. However, the harmonic measurement technique has never been verified in antiferromagnetic heterostructures. Here, we report for the first time harmonic measurements in Pt/$α$-Fe$_2$O$_3$ bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/$α$-Fe$_2$O$_3$ emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

preprint2019arXiv

Metal$/BaTiO_{3}/β-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $β$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.