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Simas Glinskis

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other Other Computer Science

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preprint2020arXiv

Roof Age Determination for the Automated Site-Selection of Rooftop Solar

Rooftop solar is one of the most promising tools for drawing down greenhouse gas (GHG) emissions and is cost-competitive with fossil fuels in many areas of the world today. One of the most important criteria for determining the suitability of a building for rooftop solar is the current age of its roof. The reason for this is simple -- because rooftop solar installations are long-lived, the roof needs to be new enough to last for the lifetime of the solar array or old enough to justify being replaced. In this paper we present a data-driven method for determining the age of a roof from historical satellite imagery, which removes one of the last obstacles to a fully automated pipeline for rooftop solar site selection. We estimate that a full solution to this problem would reduce customer acquisition costs for rooftop solar by $\sim$20\%, leading to an additional $\sim$750 megatons of CO$_2$ displaced between 2020 and 2050.

preprint2014arXiv

Fabrication of Electronic Fabry-Perot Interferometer in the Quantum Hall Regime

A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposition of impurities near the device. Optimization of the quantum point contacts (QPC) is achieved via systematically varying the etch depth and monitoring the device resistance between segmented etching sessions. The etching is stopped when a desired value of resistance is obtained. Finer control of interference trajectories is obtained by the gate metallized inside the etched area by e-beam evaporation. Our approach allows for a control of the delicate potential bending near the quantum well by tuning the confining potential of the quantum point contacts.

preprint2011arXiv

Multiband Transport in Bilayer Graphene at High Carrier Densities

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\geq2.4\times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands.