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Researcher profile

Silvia Picozzi

Silvia Picozzi contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

9 published item(s)

preprint2022arXiv

Curved Magnetism in CrI$_3$

Curved magnets attract considerable interest for their unusually rich phase diagram, often encompassing exotic (e.g., topological or chiral) spin states. Micromagnetic simulations are playing a central role in the theoretical understanding of such phenomena; their predictive power, however, rests on the availability of reliable model parameters to describe a given material or nanostructure. Here we demonstrate how non-collinear-spin polarized density-functional theory can be used to determine the flexomagnetic coupling coefficients in real systems. By focusing on monolayer CrI$_3$, we find a crossover as a function of curvature between a magnetization normal to the surface to a cycloidal state, which we rationalize in terms of effective anisotropy and Dzyaloshinskii-Moriya contributions to the magnetic energy. Our results reveal an unexpectedly large impact of spin-orbit interactions on the curvature-induced anisotropy, which we discuss in the context of existing phenomenological models.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence for a single-layer van der Waals multiferroic

Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a ferroelectric polarization through various mechanisms, such as the spin-current or the inverse Dzyaloshinskii-Moriya effect. This intrinsic coupling between the magnetic and dipolar order parameters results in record-strength magnetoelectric effects. Two dimensional materials possessing such intrinsic multiferroic properties have been long sought for harnessing magnetoelectric coupling in nanoelectronic devices. Here, we report the discovery of type-II multiferroic order in a single atomic layer of the transition metal-based van der Waals material NiI2. The multiferroic state of NiI2 is characterized by a proper-screw spin helix with given handedness, which couples to the charge degrees of freedom to produce a chirality-controlled electrical polarization. We use circular dichroic Raman measurements to directly probe the magneto-chiral ground state and its electromagnon modes originating from dynamic magnetoelectric coupling. Using birefringence and second-harmonic generation measurements, we detect a highly anisotropic electronic state simultaneously breaking three-fold rotational and inversion symmetry, and supporting polar order. The evolution of the optical signatures as a function of temperature and layer number surprisingly reveals an ordered magnetic, polar state that persists down to the ultrathin limit of monolayer NiI2. These observations establish NiI2 and transition metal dihalides as a new platform for studying emergent multiferroic phenomena, chiral magnetic textures and ferroelectricity in the two-dimensional limit.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Microscopic origin of magnetism in monolayer $3d$ transition metal dihalides

Motivated by the recent wealth of exotic magnetic phases emerging in two-dimensional frustrated lattices, we investigate the origin of possible magnetism in the monolayer family of triangular lattice materials $MX_2$ ($M$={V, Mn, Ni}, $X$={Cl, Br, I}). We first show that consideration of general properties such as filling and hybridization enables to formulate trends for the most relevant magnetic interaction parameters. In particular, we observe that the effects of spin-orbit coupling (SOC) can be effectively tuned through the ligand elements as the considered 3$d$ transition metal ions do not strongly contribute to the anisotropic component of the inter-site exchange interaction. Consequently, we find that the corresponding SOC matrix-elements differ significantly from the atomic limit. In a next step and by using two complementary approaches based on first principles, we extract realistic effective spin models and find that in the case of heavy ligand elements, SOC effects manifest in anisotropic exchange and single-ion anisotropy only for specific fillings.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards machine learning for microscopic mechanisms: a formula search for crystal structure stability based on atomic properties

Machine Learning (ML) techniques are revolutionizing the way to perform efficient materials modeling. Nevertheless, not all the ML approaches allow for the understanding of microscopic mechanisms at play in different phenomena. To address the latter aspect, we propose a combinatorial machine-learning approach to obtain physical formulas based on simple and easily-accessible ingredients, such as atomic properties. The latter are used to build materials features that are finally employed, through Linear Regression, to predict the energetic stability of semiconducting binary compounds with respect to zincblende and rocksalt crystal structures. The adopted models are trained using dataset built from first-principles calculations. Our results show that already one-dimensional (1D) formulas well describe the energetics; a simple grid-search optimization of the automatically-obtained 1D-formulas enhances the prediction performances at a very small computational cost. In addition, our approach allows to highlight the role of the different atomic properties involved in the formulas. The computed formulas clearly indicate that "spatial" atomic properties (i.e. radii indicating maximum probability densities for $s,p,d$ electronic shells) drive the stabilization of one crystal structure with respect to the other, suggesting the major relevance of the radius associated to the $p$-shell of the cation species.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Half-metallic ferromagnetism in layered CdOHCl induced by hole doping

Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic microscopic origin of magnetism in doped CdOHCl, a van der Waals material from which 2D layers may be exfoliated. By means of first principles simulations, we predict homogeneous hole-doping to give rise to $p$-band magnetism in both the bulk and monolayer phases and interpret our findings in terms of Stoner instability: as the Fermi level is tuned via hole-doping through singularities in the 2D-like density of states, ferromagnetism develops with large saturation magnetization of 1 $μ_B$ per hole, leading to a half-metallic behaviour for layer carrier densities of the order of 10$^{14}$ cm$^{-2}$. Furthermore, we put forward electrostatic doping as an additional handle to induce magnetism in monolayers and bilayers of CdOHCl. Upon application of critical electric fields perpendicular to atomically-thin-films (as low as 0.2 V/$A°$ and 0.5 V/$A°$ in the bilayer and monolayer case, respectively), we envisage the emergence of a magnetic half-metallic state. The different behaviour of monolayer vs bilayer systems, as well as an observed asymmetric response to positive and negative electric fields in bilayers, are interpreted in terms of intrinsic polarity of CdOHCl atomic stacks, a distinctive feature of the material. In perspective, given the experimentally accessible magnitude of critical fields in bilayer of CdOHCl, one can envisage $p$ band magnetism to be exploited in miniaturized spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anomalous Hall effect in antiferromagnetic/non-magnetic interfaces

We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density functional theory indicates that an interfacial magnetization can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an easy axis out of plane arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associated to the interface between Pt and Cr layers. We show that this effect originates from the combination of proximity-induced magnetization and a nontrivial topology of the band structure at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Band splitting with vanishing spin polarizations in noncentrosymmetric crystals

The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin-orbit coupling (SOC) splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discover a new phenomenon, dubbed as band splitting with vanishing spin polarizations (BSVSP), in which, as usual, SOC splits the energy bands in nonmagnetic non-centrosymmetric systems; surprisingly, however, both split bands show no net spin polarization along certain high-symmetry lines in the Brillouin zone. In order to rationalize this phenomenon, we propose a new classification of point groups into pseudo-polar and non-pseudo-polar groups. By means of first-principles simulations, we demonstrate that BSVSP can take place in both symmorphic (e.g., bulk GaAs) and non-symmorphic systems (e.g., two dimensional ferroelectric SnTe). Furthermore, we propose a novel linear magnetoelectric coupling in reciprocal space, which could be employed to tune the spin polarization with an external electric field. The BSVSP effect and its manipulation could therefore pave a new way to novel spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Rashba spin-splitting in ferroelectric oxides: from rationalizing to engineering

Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are typically not suitable FERSC candidates. By rationalizing how this limitation can be by-passed through band engineering of the electronic structure in layered perovskites, we identify the Bi$_2$WO$_6$ Aurivillius crystal as the first robust ferroelectric with large and reversible Rashba spin-splitting, that can even be substantially doped without losing its ferroelectric properties. Importantly, we highlight that a unidirectional spin-orbit field arises in layered Bi$_2$WO$_6$, resulting in a protection against spin-decoherence.We highlight moreover that a unidirectional spin-orbit field arises in Bi$_2$WO$_6$, in which the spin-texture is so protected against spin-decoherence.

0 citations0 reviewsNo code linkedOpen access